Angled broad-area semiconductor lasers to emit high output power with good beam quality

Yi-Shin Su; Chih-Hung Tsai; Chia-Wei Tsai; Din Ping Tsai; Ching-Fuh Lin

doi:10.1117/12.525576

11 May 2004 Angled broad-area semiconductor lasers to emit high output power with good beam quality

Yi-Shin Su, Chih-Hung Tsai, Chia-Wei Tsai, Din Ping Tsai, Ching-Fuh Lin

Proceedings Volume 5365, Novel In-Plane Semiconductor Lasers III; (2004) https://doi.org/10.1117/12.525576
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

A new type of laser diodes with good beam quality is introduced. The far-field divergence angle can be close to diffraction-limited value. In the new design, the direction of the waveguide on a broad area Fabry-Perot laser diode is tilted at an angle from the facet normal. This design is called “angled broad area laser diode”. In this tilted waveguide device, filamentation is not observed. The far-field divergence angle is generally within 5 times the diffraction-limited value. This tilted broad area laser is advantageous over the angled grating DFB laser because the difficulty of matching the grating period with peak gain wavelength is avoided.

Citation Download Citation

Yi-Shin Su, Chih-Hung Tsai, Chia-Wei Tsai, Din Ping Tsai, and Ching-Fuh Lin "Angled broad-area semiconductor lasers to emit high output power with good beam quality", Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); https://doi.org/10.1117/12.525576

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