Mechanism of etching of silicon-based materials in a reactive plasma

Vayalakkara Premachandran

doi:10.1117/12.56974

1 February 1992 Mechanism of etching of silicon-based materials in a reactive plasma

Vayalakkara Premachandran

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.56974
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

The numerous interdependent variables existing in the reactive ion etch process complicates the understanding of the etch mechanisms operating in the plasma processing. The knowledge of the exact mechanisms will, however, be useful for developing an etch process with improved etch rate, etch profile, selectivity, uniformity, etc. The results of a detailed study on the etch behavior of Si, SiO₂, and Si₃ N₄ in fluorine and chlorine containing gas plasmas are reported in this paper, to arrive at some of the possible mechanisms operating in the reactive ion etch process.

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Vayalakkara Premachandran "Mechanism of etching of silicon-based materials in a reactive plasma", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.56974

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KEYWORDS

Etching

Silicon

Plasma

Fluorine

Reactive ion etching

Ions

Chemical species

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