Paper
1 July 1991 Advances in power MMIC amplifier technology in space communications
Hua Quen Tserng, Paul Saunier
Author Affiliations +
Abstract
Advances in microwave and millimeter-wave power monolithic amplifier technology are reviewed. Device structures and circuit topologies that enhance the efficiency of monolithic power amplifiers for space communication applications are discussed. Mature GaAs MESFETs as well as emerging III-V heterostructure field-effect and bipolar transistors designed for high-efficiency operation are covered. Relative merits of various types of devices for implementation in high performance monolithic amplifiers are discussed.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hua Quen Tserng and Paul Saunier "Advances in power MMIC amplifier technology in space communications", Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); https://doi.org/10.1117/12.44482
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Cited by 4 scholarly publications.
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KEYWORDS
Amplifiers

Field effect transistors

Gallium arsenide

Microwave radiation

Transistors

X band

Aerospace engineering

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