Paper
1 July 1991 High-efficiency dual-band power amplifier for radar applications
Denis A. Masliah, Bradley S. Cole, Aryeh Platzker, Manfred Schindler
Author Affiliations +
Abstract
A two-stage Gallium Arsenide (GaAs) monolithic power amplifier has been developed. The main features of the amplifier are the coverage of two distinct frequency bands, X-band and Ku-band; high power output of 800 mW at 2 dB compression at 85 C, and high efficiency, 14 to 20 percent at 85 C. The circuit includes on-chip biasing accessible from both sides of the circuit and is stable under any combination of input/output loads attainable with standard tuners. The amplifier measures 0.109 by 0.120 in. and was fabricated with standard ion-implanted, 0.5 micron gate length MESFETs.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Denis A. Masliah, Bradley S. Cole, Aryeh Platzker, and Manfred Schindler "High-efficiency dual-band power amplifier for radar applications", Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); https://doi.org/10.1117/12.44486
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KEYWORDS
Amplifiers

Field effect transistors

Radar

Telecommunications

Integrated circuits

Microwave radiation

Sensors

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