Measuring films on and below polycrystalline silicon using reflectometry

Herbert L. Engstrom; Stanley E. Stokowski

doi:10.1117/12.44467

1 July 1991 Measuring films on and below polycrystalline silicon using reflectometry

Herbert L. Engstrom, Stanley E. Stokowski

Proceedings Volume 1464, Integrated Circuit Metrology, Inspection, and Process Control V; (1991) https://doi.org/10.1117/12.44467
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

Visible and ultraviolet light reflectometry provides a fast, convenient, and nondestructive method of characterizing multilayer film structures that include polycrystalline silicon. Reflectance measurements of silicon wafers containing such films have provided information as to the roughness of the poly surface, the thickness of the films, and the optical properties of the poly.

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Herbert L. Engstrom and Stanley E. Stokowski "Measuring films on and below polycrystalline silicon using reflectometry", Proc. SPIE 1464, Integrated Circuit Metrology, Inspection, and Process Control V, (1 July 1991); https://doi.org/10.1117/12.44467

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