Measuring refractive indices of films on semiconductors by microreflectometry

Stanley E. Stokowski

doi:10.1117/12.20052

1 June 1990 Measuring refractive indices of films on semiconductors by microreflectometry

Stanley E. Stokowski

Proceedings Volume 1261, Integrated Circuit Metrology, Inspection, and Process Control IV; (1990) https://doi.org/10.1117/12.20052
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

Refractive index variations of film materials are measured using a spectral micro-reflectometer, the Tencor® TF-1. The principles of thickness and refractive index determination are discussed. An effective medium model of film materials is applied to calculating refractive indices and their wavelength dependence. Refractive indices for typical poly-crystalline silicon are given. Compositional and structural inhomogeneities cause refractive index variations. Neglecting these index variations leads to misinterpretation of film thickness measurements.

Citation Download Citation

Stanley E. Stokowski "Measuring refractive indices of films on semiconductors by microreflectometry", Proc. SPIE 1261, Integrated Circuit Metrology, Inspection, and Process Control IV, (1 June 1990); https://doi.org/10.1117/12.20052

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