Advanced pattern-centric solutions for R&D and HVM applications

Ray Xu; Zhijin Chen; Chenwei Gong; Di Yin; Khurram Zafar; Kaushik Sah

doi:10.1117/12.3015164

9 April 2024 Advanced pattern-centric solutions for R&D and HVM applications

Ray Xu, Zhijin Chen, Chenwei Gong, Di Yin, Khurram Zafar, Kaushik Sah

Proceedings Volume 12955, Metrology, Inspection, and Process Control XXXVIII; 129553R (2024) https://doi.org/10.1117/12.3015164
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Conference Poster

Abstract

With the increasing complexity of semiconductor manufacturing processes, from early R&D through ramp and high-volume manufacturing (HVM), a myriad of data analysis solutions are required for fast and actionable decisions in a fab. In our previous work, we used the SEM metrology capabilities of aiSIGHT to perform shape analysis and defect detection of contact holes and pillars in tight-pitch DRAM structures such as storage node landing pad arrays (SNLP) to gain insights on process variability. This paper focuses on a different type of metrology application, extracting unbiased roughness from mask and wafer SEM images, such as unbiased line edge roughness (LER) and line width roughness (LWR), along with defect detection.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Ray Xu, Zhijin Chen, Chenwei Gong, Di Yin, Khurram Zafar, and Kaushik Sah "Advanced pattern-centric solutions for R&D and HVM applications", Proc. SPIE 12955, Metrology, Inspection, and Process Control XXXVIII, 129553R (9 April 2024); https://doi.org/10.1117/12.3015164

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