Poster
10 April 2024 High throughput, angstrom-level metrology for copper-copper hybrid bonding
Author Affiliations +
Conference Poster
Abstract
Pitch scaling of interconnects is required for 3D system integration with the industry shifting to bumpless bonding technology. However, hybrid metal/dielectric bonding requires tight process control of planarity after chemical mechanical polishing (CMP) to avoid bonding voids. Due to its sub-angstrom resolution, atomic force microscopy (AFM) is typically used to assess the nano-topography but conventional systems suffer from increased noise floor at high scanning speeds making it unsuitable for high-volume manufacturing (HVM). Here, we validate a novel in-line high-throughput AFM system (QUADRA) by reporting the topographical parameters of 250 nm and 1 μm size copper nano-pads at high scanning speeds that reach tens of wafers per hour throughput.
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Arseniy Kalinin, Niranjan Saikumar, Irene Battisti, Erik Simons, Seokhan Kim, ShihWei Yu, Hokyun Chin, Artem Khachaturiants, Cong Chen, Bensu Tunca Altintas, Soon Aik Chew, Boyao Zhang, Nelda Antonovaité, Rudolf Wilhelm, Alain Moussa, Janusz Bogdanowicz, Anne-Laure Charley, and Hamed Sadeghian "High throughput, angstrom-level metrology for copper-copper hybrid bonding", Proc. SPIE 12955, Metrology, Inspection, and Process Control XXXVIII, 129552T (10 April 2024); https://doi.org/10.1117/12.3010482
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Metrology

Chemical mechanical planarization

Copper

Semiconducting wafers

Atomic force microscopy

High volume manufacturing

Surface roughness

Back to Top