High performance all-oxide thin film tunable capacitors on Si substrates for agile microwave applications

Yating Ruan; Stipo Matic; Patrick Salg; Dominik Walk; Zeinar Lukas; Philipp Komissinskiy; Rolf Jakoby; Lambert Alff

doi:10.1117/12.2665973

16 March 2023 High performance all-oxide thin film tunable capacitors on Si substrates for agile microwave applications

Yating Ruan, Stipo Matic, Patrick Salg, Dominik Walk, Zeinar Lukas, Philipp Komissinskiy, Rolf Jakoby, Lambert Alff

Proceedings Volume 12422, Oxide-based Materials and Devices XIV; 124220V (2023) https://doi.org/10.1117/12.2665973
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

Here we present all-oxide thin film tunable capacitors (varactors) grown epitaxially on silicon substrates, using a SrTiO₃ buffer layer. In the all-oxide varactors, a highly conducting oxide SrMoO₃ bottom electrode is covered with a functional 100nm BaxSr_1−xTiO₃ tunable dielectric layer. A combined Au/Pt layer is used as a top electrode. The microwave properties show a tunability of 2 at 10V bias voltage and a high quality factor Q(0V) = 45 at 1 GHz. Further improvement of the electric performance of the all-oxide varactors is feasible by the optimization of the growth process of the oxide layers and extending the SrMoO₃ thicknesses beyond the skin depth at frequencies relevant for the considered application. The all-oxide varactors on Si are suitable for the high performance agile devices with low tuning voltages and ultra-low power consumption.

Conference Presentation

Citation Download Citation

Yating Ruan, Stipo Matic, Patrick Salg, Dominik Walk, Zeinar Lukas, Philipp Komissinskiy, Rolf Jakoby, and Lambert Alff "High performance all-oxide thin film tunable capacitors on Si substrates for agile microwave applications", Proc. SPIE 12422, Oxide-based Materials and Devices XIV, 124220V (16 March 2023); https://doi.org/10.1117/12.2665973

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