Paper
19 December 2008 Low-temperature processing of PZT thin films by 2.45 GHz microwave heating
Z. J. Wang, Y. Otsuka, Z. Cao, M. W. Zhu, N. Yoshikawa, H. Kokawa
Author Affiliations +
Proceedings Volume 7267, Smart Materials V; 726702 (2008) https://doi.org/10.1117/12.810604
Event: SPIE Smart Materials, Nano- and Micro-Smart Systems, 2008, Melbourne, Australia
Abstract
The effect of microwave heating with a frequency of 2.45 GHz on the low-temperature crystallization of Pb(ZrxTi1-x)O3 (PZT) films was investigated. PZT thin films were coated on Pt/Ti/SiO2/Si substrates by the sol-gel method and then crystallized by single-mode 2.45 GHz microwave irradiation in the magnetic field. The elevated temperature generated by microwave heating used to obtain the perovskite phase was only 450°C, which is significantly lower than that of conventional thermal processing. The PZT films crystallized by microwave heating at 450°C showed similar ferroelectric properties to those of the films crystallized by conventional thermal processing at 600°C. The average remanent polarization and coercive field of the PZT films are approximately 21 µC/cm2 and 90 kV/cm, respectively. It is clear that single-mode microwave irradiation in the magnetic field is effective for obtaining perovskite PZT thin films at low temperatures.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Z. J. Wang, Y. Otsuka, Z. Cao, M. W. Zhu, N. Yoshikawa, and H. Kokawa "Low-temperature processing of PZT thin films by 2.45 GHz microwave heating", Proc. SPIE 7267, Smart Materials V, 726702 (19 December 2008); https://doi.org/10.1117/12.810604
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KEYWORDS
Ferroelectric materials

Microwave radiation

Crystals

Thin films

Magnetism

Perovskite

Annealing

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