GeSnOI technology for enhanced Si-based laser designs and performances

Moustafa El Kurdi; Anas Elbaz; Nils von den Driesch; Binbin Wang; Emilie Sakat; Etienne Herth; Gilles Patriarche; Konstantinos Pantzas; Isabelle Sagnes; Xavier Checoury; Jérémie Chrétien; Nicolas Pauc; Vincent Calvo; Frédéric Boeuf; Philippe Boucaud; Alexei Chelnokov; Vincent Reboud; Detlev Grützmacher; Dan Buca; Jean-Michel Hartmann

doi:10.1117/12.2587318

5 March 2021 GeSnOI technology for enhanced Si-based laser designs and performances

Moustafa El Kurdi, Anas Elbaz, Nils von den Driesch, Binbin Wang, Emilie Sakat, Etienne Herth, Gilles Patriarche, Konstantinos Pantzas, Isabelle Sagnes, Xavier Checoury, Jérémie Chrétien, Nicolas Pauc, Vincent Calvo, Frédéric Boeuf, Philippe Boucaud, Alexei Chelnokov, Vincent Reboud, Detlev Grützmacher, Dan Buca, Jean-Michel Hartmann

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Proceedings Volume 11705, Novel In-Plane Semiconductor Lasers XX; 117050I (2021) https://doi.org/10.1117/12.2587318
Event: SPIE OPTO, 2021, Online Only

Abstract

Direct band gap achievements in germanium by alloying with tin or by tensile strain engineering has enabled, in recent years, several demonstrations of laser emission in the 2-5µm wavelength range. This fast and promising emergence of CMOS-compatible laser technology in the Mid-IR faces, however, major issues, e.g. high threshold power densities, which limit the integration of GeSn as a gain media on a silicon chip for cost-efficient sensing and/or short-range Datacom devices. We show that combining tensile strain and Sn alloying enables one to effectively engineer the material band structure and its optical gain properties. We also evidence the importance of defects management on GeSn lasing characteristics, beyond the band-structure engineering. We discuss the potential of GeSnOI technology to address the above-mentionned aspects, which enabled to drastically reduce the lasing thresholds in microdisk laser cavities and reach continuous-wave operation in GeSn.

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Moustafa El Kurdi, Anas Elbaz, Nils von den Driesch, Binbin Wang, Emilie Sakat, Etienne Herth, Gilles Patriarche, Konstantinos Pantzas, Isabelle Sagnes, Xavier Checoury, Jérémie Chrétien, Nicolas Pauc, Vincent Calvo, Frédéric Boeuf, Philippe Boucaud, Alexei Chelnokov, Vincent Reboud, Detlev Grützmacher, Dan Buca, and Jean-Michel Hartmann "GeSnOI technology for enhanced Si-based laser designs and performances", Proc. SPIE 11705, Novel In-Plane Semiconductor Lasers XX, 117050I (5 March 2021); https://doi.org/10.1117/12.2587318

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KEYWORDS

Laser development

Germanium

Silicon

Interfaces

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