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5 March 2021 The efficiency enhancement of InGaN-based red LEDs with thick GaN underlying layers
Daisuke Iida, Zhe Zhuang, Pavel Kirilenko, Martin Velazquez-Rizo, Mohammed Najmi, Kazuhiro Ohkawa
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Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 1168618 (2021) https://doi.org/10.1117/12.2577028
Event: SPIE OPTO, 2021, Online Only
Abstract
We obtained the EL intensity enhancement by a factor of 1.3 with increasing of n-GaN thickness from 2 to 8 µm. We achieved a light output, forward voltage, FWHM and external quantum efficiency of 0.64 mW, 3.3 V, 59 nm, and 1.6% at 20 mA, respectively. Particularly, the wall plug efficiency was 1.0%, which is comparable with the state-of-the-art InGaN-based red LEDs. The reduction of the in-plane compressive stress by the GaN underlying layers appears to be crucial for enhancing the light output of InGaN-based red LEDs on conventional sapphire substrates.
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Daisuke Iida, Zhe Zhuang, Pavel Kirilenko, Martin Velazquez-Rizo, Mohammed Najmi, and Kazuhiro Ohkawa "The efficiency enhancement of InGaN-based red LEDs with thick GaN underlying layers", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 1168618 (5 March 2021); https://doi.org/10.1117/12.2577028
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KEYWORDS
Light emitting diodes
Gallium nitride
Indium gallium nitride
Electroluminescence
Quantum wells
Atomic force microscopy
Crystals
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