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13 March 2024 Highly efficient InGaN-based red LEDs for AR and VR applications
Kazuhiro Ohkawa, Pavel Kirilenko, Daisuke Iida
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Proceedings Volume PC12906, Light-Emitting Devices, Materials, and Applications XXVIII; PC129060O (2024) https://doi.org/10.1117/12.3001357
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
InGaN red LEDs are the key devices to realize AR and VR displays. We have developed InGaN single-QW red LEDs. The InGaN red LEDs show good I-V characteristics. The built-in voltage was only Vb=2.4 V. The peak wavelength at 2.4 V was 641 nm, therefore, the ratio of the photon energy to eVb was as high as 80%. Even at the 20 mA operation, the necessary forward bias was as low as 2.96 V. The light output power density was as high as 0.87 W/cm2 at 20 mA. Therefore, it shows a high WPE of 2.9% at 20 mA.
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Kazuhiro Ohkawa, Pavel Kirilenko, and Daisuke Iida "Highly efficient InGaN-based red LEDs for AR and VR applications", Proc. SPIE PC12906, Light-Emitting Devices, Materials, and Applications XXVIII, PC129060O (13 March 2024); https://doi.org/10.1117/12.3001357
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KEYWORDS
Light emitting diodes
Indium gallium nitride
External quantum efficiency
Quantum wells
RGB color model
Color
Crystals
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