Presentation
20 August 2020 Germanium: a semiconducting platform for spin-orbitronics
Thomas Guillet, Carlo Zucchetti, Adele Marchionni, Quentin Barbedienne, Ali Hallal, Alain Marty, Céline Vergnaud, Giovanni Isella, Henri Jaffrès, Nicolas Reyren, Jean-Marie George, Mair Chshiev, Marco Finazzi, Franco Ciccacci, Paolo Biagioni, Aurélien Masseboeuf, Hanako Okuno, Federico Bottegoni, Albert Fert, Matthieu Jamet
Author Affiliations +
Abstract
Germanium is a very good candidate to host a versatile spintronics platform thanks to its unique spin and optical properties. Recently we focused on two approaches in order to tune the spin-orbit interaction (SOI) in this Ge-based platform. The first one relies on growing high quality epitaxial topological insulators (TIs) on a Ge (111) substrate, we developed an original method to probe the spin-to-charge conversion at the TI/Ge(111) interface by taking advantage of the Ge optical properties. The latter approach is to exploit the intrinsic SOI of Ge (111). By investigating the electrical properties of a thin Ge(111), we found a large unidirectional Rashba magnetoresistance, which we ascribe to the interplay between the externally applied magnetic field and the current-induced pseudo-magnetic field applied in the spin-splitted subsurface states of Ge (111). Both studies open a door towards spin manipulation with electric fields in an all-semiconductor technology platform.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas Guillet, Carlo Zucchetti, Adele Marchionni, Quentin Barbedienne, Ali Hallal, Alain Marty, Céline Vergnaud, Giovanni Isella, Henri Jaffrès, Nicolas Reyren, Jean-Marie George, Mair Chshiev, Marco Finazzi, Franco Ciccacci, Paolo Biagioni, Aurélien Masseboeuf, Hanako Okuno, Federico Bottegoni, Albert Fert, and Matthieu Jamet "Germanium: a semiconducting platform for spin-orbitronics", Proc. SPIE 11470, Spintronics XIII, 114702Q (20 August 2020); https://doi.org/10.1117/12.2567222
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KEYWORDS
Germanium

Semiconductors

Optical properties

Dielectrics

Magnetism

Nanotechnology

Silicon

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