Experimental investigation of high power inductively coupled plasma etching of fused silica at atmospheric pressure

Xiao-qiang Zhang; Yuan-cheng Sun; Xiu-rong Du; Xue-fu Song

doi:10.1117/12.2551583

31 January 2020 Experimental investigation of high power inductively coupled plasma etching of fused silica at atmospheric pressure

Xiao-qiang Zhang, Yuan-cheng Sun, Xiu-rong Du, Xue-fu Song

Author Affiliations +

Proceedings Volume 11427, Second Target Recognition and Artificial Intelligence Summit Forum; 114271I (2020) https://doi.org/10.1117/12.2551583
Event: Second Target Recognition and Artificial Intelligence Summit Forum, 2019, Changchun, China

Abstract

To inspect the treatment effect of high power plasma on fused silica, inductively coupled plasma with power of 36kW at atmospheric pressure , CF₄ as working gas, was applied to carry out the etching experiments of fused silica, in which the effect of CF₄ flow rate on material remove rate, surface roughness and surface profile were investigated. The experimental results showed that the material remove mechanism of fused silica treated by high power inductively coupled plasma was a result of the comprehensive effect of melting and evaporation at high temperature, chemical etching and bombardment of high energy ions. The fused silica remove rate reached 0.208g/min with the CF₄ flow rate of 2.8L/min. The surfaces of fused silica samples became rougher with the increased CF₄ flow rate, as the subsurface micro-cracks were opened and formed etching pits by the plasma etching. The surface global profile was affected seriously by the distance between outer plasma flame and samples while the local profile was dominated by etching pits.

Citation Download Citation

Xiao-qiang Zhang, Yuan-cheng Sun, Xiu-rong Du, and Xue-fu Song "Experimental investigation of high power inductively coupled plasma etching of fused silica at atmospheric pressure", Proc. SPIE 11427, Second Target Recognition and Artificial Intelligence Summit Forum, 114271I (31 January 2020); https://doi.org/10.1117/12.2551583

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