Presentation + Paper
24 February 2020 940nm 400mW transverse single mode laser diode with RISA structure
Author Affiliations +
Proceedings Volume 11301, Novel In-Plane Semiconductor Lasers XIX; 113010Z (2020) https://doi.org/10.1117/12.2545268
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
We present evaluation results of the 940nm 400mW transverse single-mode laser diodes (LDs) with real reflective index self-aligned (RISA) structure based on graded index separate confinement hetero structures (GRIN-SCH) for a three-dimensional (3D) depth sensor. The AlGaAs/InGaAs laser diodes that are adopted with RISA structure have many advantages over conventional complex refractive index guided lasers, what include low operating current, high temperature operation and stable fundamental transverse-mode operation up to high power levels.

Simultaneously, the RISA process is easy to control the waveguide channel width and does not require stable oxide mask for the regrowth of aluminum alloys, so it is possible to manufacture high output power and high reliability laser diodes.

At the optical power 400mW under the continuous-wave (CW) operation, Gaussian narrow far-field patterns (FFP) are measured with the full-width at half-maximum vertical divergence angle of 23°. A threshold current (Ith) of 33mA, slope efficiency (SE) of 0.81mW/mA and operating current (Iop) of 503mA are obtained at room temperature. Also, we could achieve catastrophic optical damage (COD) of 657mW and long-term reliability of 60°C with TO-56 package.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeong-Geun Kwak, Jong-Keun Park, Jeong-Hyun Park, Jae-Gyu Kim, An-Sik Choi, Tae-Kyung Kim, and Duchang Heo "940nm 400mW transverse single mode laser diode with RISA structure", Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113010Z (24 February 2020); https://doi.org/10.1117/12.2545268
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KEYWORDS
Gallium arsenide

Semiconductor lasers

Aluminum

Reliability

Silicon

Resistance

Etching

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