The Time And Space Distribution Of Excess Carrier In SPRITE Device

Xie-qin Liang; Yu-qin Guo; Xie-rong Hu; Jia-xiong Fang; Guo-sen Xu

doi:10.1117/12.960667

11 October 1989 The Time And Space Distribution Of Excess Carrier In SPRITE Device

Xie-qin Liang, Yu-qin Guo, Xie-rong Hu, Jia-xiong Fang, Guo-sen Xu

Proceedings Volume 1107, Infrared Detectors, Focal Plane Arrays, and Imaging Sensors; (1989) https://doi.org/10.1117/12.960667
Event: SPIE 1989 Technical Symposium on Aerospace Sensing, 1989, Orlando, FL, United States

Abstract

In this paper, we've studied the distribution of excess carrier in SPRITE device by solving the ambipolar continuity equation. Therefore, we've analysed boundary recombination effect and sweep-out effect on the lifetime of excess carrier in a device and the effect of applied field on the distribution, lifetime and Dλ* value.The results show the effect of boundary recombination on lifetime has to be less than body lifetime of material. The sanning velocity, body lifetime and applied field relate to each other. Only after synthesizing all kinds of specific needs, we can chose their values.

Citation Download Citation

Xie-qin Liang, Yu-qin Guo, Xie-rong Hu, Jia-xiong Fang, and Guo-sen Xu "The Time And Space Distribution Of Excess Carrier In SPRITE Device", Proc. SPIE 1107, Infrared Detectors, Focal Plane Arrays, and Imaging Sensors, (11 October 1989); https://doi.org/10.1117/12.960667

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