A Stepper Image Monitor For Precise Setup And Characterization

T. A. Brunner; S. Cheng; A. E. Norton

doi:10.1117/12.968434

1 January 1988 A Stepper Image Monitor For Precise Setup And Characterization

T. A. Brunner, S. Cheng, A. E. Norton

Proceedings Volume 0922, Optical/Laser Microlithography; (1988) https://doi.org/10.1117/12.968434
Event: Santa Clara Symposium on Microlithography, 1988, Santa Clara, CA, United States

Abstract

The Stepper Image Monitor(SIM) system tests the resolution and overlay performance of complete stepper systems by measuring the aerial image intensity profile at many wafer locations and focus offsets. Overlay error vectors can be measured with a precision of .02μm and best focus can be determined to a precision of O.lμm without exposing test wafers. New data will be presented on lens heating effects, along with a simple model. Imagery of high NA steppers will be explored by observing image profiles of various sub-micron lines. A new poly-on-oxide process to fabricate permanent SIM reference wafers will be described. This paper will describe other recent developments which have made SIM techniques broadly applicable to many practical problems of stepper setup and characterization.

Citation Download Citation

T. A. Brunner, S. Cheng, and A. E. Norton "A Stepper Image Monitor For Precise Setup And Characterization", Proc. SPIE 0922, Optical/Laser Microlithography, (1 January 1988); https://doi.org/10.1117/12.968434

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