Paper
1 January 1988 Particle Detection By Low Voltage SEM
Paul Buysse, Fedor Coopmans
Author Affiliations +
Abstract
In an effort to learn more about the nature and distribution in size of particles encountered in device fabrication, we have studied the non destructive inspection performance obtained with standard and low voltage scanning electron microscopes. To simulate particle defects in and on layers, diamond particles with known size were used. This present study proves that the low voltage SEM is an excellent tool to detect and measure very small particle defects on layers but the performance for particles within layers is marginal.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul Buysse and Fedor Coopmans "Particle Detection By Low Voltage SEM", Proc. SPIE 0921, Integrated Circuit Metrology, Inspection, and Process Control II, (1 January 1988); https://doi.org/10.1117/12.968353
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KEYWORDS
Inspection

Particles

Scanning electron microscopy

Semiconducting wafers

Defect detection

Video

Wafer inspection

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