Photoreflectance Spectroscopy Studies Of Alloy Compositions And Ion Implant Damage In Zincblende-Type Semiconductors

R. C. Bowman Jr.; R. L. Alt; K. W. Brown

doi:10.1117/12.940898

22 April 1987 Photoreflectance Spectroscopy Studies Of Alloy Compositions And Ion Implant Damage In Zincblende-Type Semiconductors

R. C. Bowman Jr., R. L. Alt, K. W. Brown

Author Affiliations +

Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940898
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

The optical transitions near the band gap energy E0 have been obtained by photoreflectance (PR) measurements on GaAs and CdTe single crystals, various epitaxially grown AlxGai_xAs layers, and GaAs-AlGaAs quantum well and superlattice structures. The PR spectra have been analyzed to determine the behavior of the E0 values and lineshape parameters at different alloy compositions and structural periodicities for the multilayer materials. The alloy compositions derived from the PR data are shown to be consistent with the values obtained by Raman and x-ray diffraction measurements on the same samples. PR is also found to be a convenient method to study the effects of ion implantation and subsequent annealing treatments on the structural and electronic properties of GaAs and CdTe. The incomplete recoveries of the PR spectra following thermal anneals at 500°C and 850°C for CdTe and GaAs, respectively, suggest these treatments are only partially effective in reducing the lattice damage caused by these implants.

Citation Download Citation

R. C. Bowman Jr., R. L. Alt, and K. W. Brown "Photoreflectance Spectroscopy Studies Of Alloy Compositions And Ion Implant Damage In Zincblende-Type Semiconductors", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940898

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