Submicron Optical Lithography Using A KrF Excimer Laser Projection Exposure System

Makoto Nakase; Takashi Sato; Misako Nonaka; Iwao Higashikawa; Yasuhiro Horiike

doi:10.1117/12.940375

30 June 1987 Submicron Optical Lithography Using A KrF Excimer Laser Projection Exposure System

Makoto Nakase, Takashi Sato, Misako Nonaka, Iwao Higashikawa, Yasuhiro Horiike

Proceedings Volume 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI; (1987) https://doi.org/10.1117/12.940375
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

The potential of excimer laser lithography was studied by using a newly developed KrF excimer laser exposure system which employed an achromatic lens of 0.37 NA. As a result, a resolution limit of 0.3 μm was achieved by the use of PMGI resist on a tri-level structure. However, for the case of resist exposure on a bare Si wafer, the resist film remailed locally in layers along the nodes of the standing waves, and fine pattern could not be obtained. This phenomenon is called spotted development in this paper. The spotted development, which is due to strong standing waves within the resist film, was successfully solved by the use of new resist process technologies such as a bias exposure method and excimer laser image reversal process.

Citation Download Citation

Makoto Nakase, Takashi Sato, Misako Nonaka, Iwao Higashikawa, and Yasuhiro Horiike "Submicron Optical Lithography Using A KrF Excimer Laser Projection Exposure System", Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); https://doi.org/10.1117/12.940375

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