Paper
25 August 1987 High Resolution Positive E-Beam Resist With Dry Etch Durability
Akira Akimoto, Toru Seita, Yoshitaka Tsutsumi
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Abstract
Electron beam exposure characteristics,such as sensitivity and contrast,and durability against oxygen plasma were measured with poly(1-pheny1-2.2.2-trifluoroethyl-α-chloro-acrylate) PCLTF prepared by solution free radical polymerization. New developers were examined for this type of polymer. Using mixtures of diisobutyl ketone DIBK and isopropyl alcohol IPA (35:65),PCLTF was preciously imaged at 25pc/cm2(0.5μm lines and spaces). Moreover with use of suitable mixture of diisopropyl ketone DIPK and isopropyl alcohol (35:65),the image at 8pc/cm2(1μm lines & spaces) is also possible. PCLTF was 1.5 times the high dry etching durability of PMMA against oxygen plasma,and showed considerably high contrast and fine gaps as narrow as 0.2μm.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akira Akimoto, Toru Seita, and Yoshitaka Tsutsumi "High Resolution Positive E-Beam Resist With Dry Etch Durability", Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); https://doi.org/10.1117/12.940332
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KEYWORDS
Polymers

Dry etching

Polymethylmethacrylate

Etching

Electron beams

Polymerization

Oxygen

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