A novel integrated demultiplexing photodetector which consists of a filter cavity and an arc absorbing
cavity is proposed in this paper. The top mirror of absorbing cavity is designed to be curved, which can
increase the times of light reflection. The maximum quantum efficiency of TE lightwave can reach
81.84%, while maximum of TM is 65.62%. An obvious near-to-zero domain of reflectivity of TM
lightwave leads to its low quantum efficiency. The impact of incident angle on quantum efficiency is
demonstrated by comparing two series of incident angles in two devices which have high and low
quantum efficiency respectively. In addition, the spectral response linewidth of this novel
photodetector is less than 0.8 nm.
In this work, we analyzed and demonstrated a multi-quantum-well InGaNAs/GaAs RCE photodetector with a vertical
taper absorption cavity operating at 1550nm. The GaAs/AlAs distributed Bragg reflectors and InGaNAs/GaAs quantum
wells were grown on GaAs substrate by molecular beam epitaxy. The growth of InGaNAs/GaAs quantum wells maybe
solves the problem that the GaAs-based materials can only response to short wavelength. The peak wavelength of the
spectral response of our photodetector is at 1558.7nm, and the spectral linewidth is 3 nm.
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