By combining dedicated near-field generation and detection techniques with Raman spectroscopy, optically inactive phonon activity is predicted. Observation of these phonons opens a new era as a novel analytical technique beyond near-field microscopy/spectroscopy which has previously only been concentrated on obtaining higher spatial resolution. As a possible example of optically inactive phonon observation, measurement of a Raman spectrum of polydiacetylene was demonstrated.
Scanning near field optical microscopy (SNOM) has been developed to assess the recombination mechanism in low-dimensional nitride semiconductors by employing spatial and temporal photoluminescence (PL) mapping under illumination-collection at cryogenic temperatures. The near-field PL images taken at an InxGa1-xN single-quantum-well (SQW) structure revealed the variation of both intensity and peak energy according to the probing location with the scale less than a few tens of a nanometer. The PL, the linewidth of which was about 60meV in macroscopic measurements, was separated into several peaks with the linewidth of about 12 meV if the SNOM-PL was taken with the aperture size of 30 nm. Clear spatial correlation was observed between PL intensity and PL peak-photon-energy, where the regions of strong PL intensity correspond to those of low PL peak-photon-energy. Time-resolved SNOM-PL study showed the important role of exciton/carrier localization in the recombination mechanism in InxGa1-xN-based quantum structures.
KEYWORDS: Near field scanning optical microscopy, Near field optics, Polarization, Near field, Polymers, Optical fibers, Polymer thin films, Optical microscopes, Optical lithography, Optics manufacturing
Regarding the characterization of the spatial distribution and the polarization condition of optical field emitted from a probe tip of scanning near-field optical microscope (SNOM), simple and effective evaluation technique is developed. It is realized in connection with the detailed knowledge of photo-induced surface relief formation phenomenon that occurs on the azobenzene functionalized polymer film. Since there was no easy method of evaluating a SNOM probe so far, this could be one of the promising techniques much more convenient than conventional methods. In this report, first the PSR phenomenon is explained and then several examples for the probe evaluation are demonstrated in far- and near-field condition. Furthermore, a trial for nano-patterning and ultra-high density rewritable data storage is performed via scanning near-field optical lithography.
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