Prof. Yeonah Shim Profile

Prof. Yeonah Shim

Nano Photo Specialist at Dongbu HiTek Co Ltd

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Author

Publications (13)

Proceedings Article | 23 March 2011 Paper

Overcome the process limitation by using inverse lithography technology with assist feature

Yeon-Ah Shim, Sungho Jun, Jaeyoung Choi, Kwangseon Choi, Jae-won Han, Kechang Wang, John McCarthy, Guangming Xiao, Grace Dai, DongHwan Son, Xin Zhou, Tom Cecil, David Kim, Ki-Ho Baik

Proceedings Volume 7973, 79732S (2011) https://doi.org/10.1117/12.870704

KEYWORDS: Lithography, SRAF, Photomasks, Image processing, Optical lithography, Optical proximity correction, Semiconducting wafers, Resolution enhancement technologies, Overlay metrology, Logic

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Proceedings Article | 27 May 2010 Paper

Improvement of KrF contact layer by inverse lithography technology with assist feature

Sungho Jun, Yeon-Ah Shim, Jaeyoung Choi, Kwangsun Choi, Jae-won Han, Kechang Wang, John McCarthy, Guangming Xiao, Grace Dai, DongHwan Son, Xin Zhou, Tom Cecil, David Kim, KiHo Baik

Proceedings Volume 7748, 77481V (2010) https://doi.org/10.1117/12.868563

KEYWORDS: Lithography, SRAF, Photomasks, Image processing, Optical lithography, Optical proximity correction, Resolution enhancement technologies, Lithographic illumination, Scanners, Computer simulations

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Proceedings Article | 23 September 2009 Paper

Effective methodology to make DFM guide line

Jaeyoung Choi, Yeonah Shim, Kyunghee Yun, Kwangseon Choi, Jaewon Han

Proceedings Volume 7488, 74883K (2009) https://doi.org/10.1117/12.833463

KEYWORDS: Design for manufacturing, Optical proximity correction, Semiconducting wafers, Transistors, Scanning electron microscopy, Semiconductors, Metals, Resolution enhancement technologies, Photomask technology, Current controlled current source

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Proceedings Article | 23 September 2009 Paper

Patterning of 90nm node flash contact hole with assist feature using KrF

Yeonah Shim, Sungho Jun, Jaeyoung Choi, Kwangseon Choi, Jae-won Han, Kechang Wang, John McCarthy, Guangming Xiao, Grace Dai, DongHwan Son, Xin Zhou, Thomas Cecil, David Kim, KiHo Baik

Proceedings Volume 7488, 748837 (2009) https://doi.org/10.1117/12.833499

KEYWORDS: Lithography, SRAF, Photomasks, Optical lithography, Image processing, Lithographic illumination, Optical proximity correction, Resolution enhancement technologies, Scanners, Computer simulations

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Proceedings Article | 17 October 2008 Paper

Design for manufacturability guideline development: integrated foundry approach

Hyesung Lee, Yeon-Ah Shim, Jae-Young Choi, Kwang-Seon Choi, Joanne Wu, Bo Su, Xinwei Zhou, Kenny Kim

Proceedings Volume 7122, 712221 (2008) https://doi.org/10.1117/12.801421

KEYWORDS: Optical proximity correction, Design for manufacturing, Nanoimprint lithography, Design for manufacturability, Semiconducting wafers, Lithography, Silicon, Wafer manufacturing, Yield improvement, Manufacturing

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Proceedings Article | 17 October 2008 Paper

Combination of rule and pattern based lithography unfriendly pattern detection in OPC flow

Jae-Hyun Kang, Jae-Young Choi, Yeon-Ah Shim, Hye-Sung Lee, Bo Su, Walter Chan, Ping Zhang, Joanne Wu, Keun-Young Kim

Proceedings Volume 7122, 71221N (2008) https://doi.org/10.1117/12.801312

KEYWORDS: Optical proximity correction, Design for manufacturing, Lithography, Scanning electron microscopy, Detection and tracking algorithms, Databases, Bridges, Model-based design, Fuzzy logic, Defect detection

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Foundry companies encounter again and again the same or similar lithography unfriendly patterns (Hot-spots) in different designs within the same technology node and across different technology nodes, which eluded design rule check (DRC), but detected again and again in OPC verification step. Since Model-based OPC tool applies OPC on whole-chip design basis, individual hot-spot patterns are treated same as the rest of design patterns, regardless of its severity. We have developed a methodology to detect those frequently appeared hot-spots in pre-OPC design, as well as post OPC designs to separate them from the rest of designs, which provide the opportunity to treat them differently in early OPC flow. The methodology utilizes the combination of rule based and pattern based detection algorithms. Some hotspot patterns can be detected using rule-based algorithm, which offer the flexibility of detecting similar patterns within pre-defined ranges. However, not all patterns can be detected (or defined) by rules. Thus, a pattern-based approach is developed using defect pattern library concept. The GDS/OASIS format hot-spot patterns can be saved into a defect pattern library. Fast pattern matching algorithm is used to detect hot-spot patterns in a design using the library as a pattern template database. Even though the pattern matching approach lacks the flexibility to detect patterns' similarity, but it has the capability to detect any patterns as long as a template exists. The pattern-matching algorithm can be either exact match or a fuzzy match. The rule based and pattern based hot-spot pattern detection algorithms complement each other and offer both speed and flexibility in hot spot pattern detection in pre-OPC and post-OPC designs. In this paper, we will demonstrate the methodology in our OPC flow and the benefits of such methodology application in production environment for 90nm designs. After the hot spot pattern detection, examples of special treatment to selected hot spot patterns will be shown.

Proceedings Article | 1 April 2008 Paper

Full chip compensation for local-flare-induced CD error using OPC/DRC method

Jae-Young Choi, Yeon-Ah Shim, Kyung-Hee Yun, Jong-Doo Kim, Jae-Hee Kim, Jae-Won Han

Proceedings Volume 6924, 69243L (2008) https://doi.org/10.1117/12.773092

KEYWORDS: Optical proximity correction, Data modeling, Critical dimension metrology, Semiconducting wafers, Photomasks, Error analysis, Lithography, Scattering, Glasses, Metals

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Proceedings Article | 1 April 2008 Paper

Improvement on OPC completeness through pre-OPC hot spot detection and fix

Yeonah Shim, Jaeyoung Choi, Jeahee Kim, Bo Su, Ping Zhang, Keun-Young Kim

Proceedings Volume 6925, 692513 (2008) https://doi.org/10.1117/12.772409

KEYWORDS: Optical proximity correction, Design for manufacturing, Lithography, Semiconducting wafers, Data processing, Semiconductors, Failure analysis, Integrated circuit design, Design for manufacturability, Manufacturing

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Proceedings Article | 4 April 2007 Paper

Methodology to set up accurate OPC model using optical CD metrology and atomic force microscopy

Yeon-Ah Shim, Jaehyun Kang, Sang-Uk Lee, Jeahee Kim, Keeho Kim

Proceedings Volume 6518, 65180C (2007) https://doi.org/10.1117/12.711936

KEYWORDS: Data modeling, Critical dimension metrology, Optical proximity correction, Atomic force microscopy, Scanning electron microscopy, Semiconducting wafers, Wafer-level optics, Statistical modeling, Electron beams, Metrology

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Proceedings Article | 27 March 2007 Paper

Advanced new OPC method to improve OPC accuracy for sub-90-nm technology

Jaeyoung Choi, Jaehyun Kang, Yeonah Shim, Kyunghee Yun, Jiho Hong, Yongseok Lee, Keeho Kim

Proceedings Volume 6520, 652047 (2007) https://doi.org/10.1117/12.712001

KEYWORDS: Data modeling, Optical proximity correction, Data conversion, Process modeling, Critical dimension metrology, Reactive ion etching, Scanning electron microscopy, Photomasks, Etching, Image processing

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Proceedings Article | 20 October 2006 Paper

The effect of sub-layer condition on the OPC model

Jaeyoung Choi, Jaehyun Kang, Yeonah Shim, Kyunghee Yun, Junseok Lee, Yongseok Lee, Keeho Kim

Proceedings Volume 6349, 63494O (2006) https://doi.org/10.1117/12.686653

KEYWORDS: Data modeling, Optical proximity correction, Statistical modeling, Critical dimension metrology, Process modeling, Lithography, Scanners, Photoresist materials, Photoresist processing, Optimization (mathematics)

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Proceedings Article | 21 March 2006 Paper

Methodology to set up mask CD specification including MEEF and process sensitivity of mask CD error

Yeon-Ah Shim, Se-Jin Park, Ju-Hyun Kim, Jea-Hee Kim, Kee-Ho Kim

Proceedings Volume 6154, 61544B (2006) https://doi.org/10.1117/12.657081

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Optical proximity correction, Lithography, Electroluminescence, Process control, Optical lithography, Reticles, Cadmium

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Proceedings Article | 20 March 2006 Paper

Mask process variation induced OPC accuracy in sub-90nm technology node

Se-Jin Park, Yeon-Ah Shim, Jae-Hyun Kang, Jae-Young Choi, Kyung-Hee Yoon, Yong-Suk Lee, Keeho Kim

Proceedings Volume 6154, 61543K (2006) https://doi.org/10.1117/12.657036

KEYWORDS: Photomasks, Optical proximity correction, Semiconducting wafers, Electroluminescence, Critical dimension metrology, Lithography, Data modeling, Error analysis, Logic, Etching

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Showing 5 of 13 publications

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