Detection of spin diffusion length in different materials has been launched tremendously so far. But due to the difficulty of obtaining a high-quality semiconductor (SC) layer on ferromagnetic metals, until now most of the studies of spin diffusion transport in SC were only limited on lateral structure devices. Here, by using ultra-high vacuum wafer-bonding technique, a vertical structure of CoFeB/MgO/Si/Pt is fabricated successfully and based on which, the spin diffusion transport is demonstrated at room temperature by spin pumping. With the Pt layer on top to detect the inverse spin hall voltage for different thickness of n-Si layer, the spin diffusion length is determined to be 3.8 μm, which is comparable with the value reported in lateral devices. Furthermore, our experiments reveal the existence of interface state at MgO/Si interface, which is essentially important to build the model of spin-mixing conductance for spin-pumping into Si.
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