Mr. Winfried W. Meier Profile

Winfried W. Meier

Senior Member Technical Staff

SPIE Involvement:

Author

Publications (8)

Proceedings Article | 2 May 2008 Paper

Double exposure technology for KrF lithography

S. Geisler, J. Bauer, U. Haak, D. Stolarek, K. Schulz, H. Wolf, W. Meier, M. Trojahn, E. Matthus, H. Beyer, G. Old, St. Marschmeyer, B. Kuck

Proceedings Volume 6792, 679203 (2008) https://doi.org/10.1117/12.798512

KEYWORDS: Lithography, Neodymium, Photomasks, Semiconducting wafers, Critical dimension metrology, Double patterning technology, Optical alignment, Sensors, Resolution enhancement technologies, Binary data

Read Abstract +

Proceedings Article | 11 April 2008 Paper

100 nm half–pitch double exposure KrF lithography using binary masks

S. Geisler, J. Bauer, U. Haak, D. Stolarek, K. Schulz, H. Wolf, W. Meier, M. Trojahn, E. Matthus

Proceedings Volume 6924, 69241Z (2008) https://doi.org/10.1117/12.771333

KEYWORDS: Lithography, Photomasks, Line edge roughness, Binary data, Critical dimension metrology, Lithographic illumination, Superposition, Stereolithography, Ultraviolet radiation, Semiconducting wafers

Read Abstract +

Proceedings Article | 20 March 2006 Paper

Application of aberration optimization for specific pattern using Nikon's TAO method

Winfried Meier, Gabriele Weirauch, Max Hoepfl, Andreas Jahnke

Proceedings Volume 6154, 61543R (2006) https://doi.org/10.1117/12.655572

KEYWORDS: Scanners, Critical dimension metrology, Wavefronts, Scanning electron microscopy, Monochromatic aberrations, Tolerancing, Wavefront aberrations, Distortion, Data modeling, Optimization (mathematics)

Read Abstract +

Proceedings Article | 15 March 2006 Paper

DOF enhancement for contact holes by using Nikon's CDP option and its introduction into production

Louis-Pierre Armellin, Virginie Dureuil, Laurent Nuel, Vincent Salvetat, Winfried Meier, Andreas Kraft

Proceedings Volume 6154, 61542B (2006) https://doi.org/10.1117/12.656522

KEYWORDS: Semiconducting wafers, Scanners, Finite element methods, Manufacturing, Optical lithography, Yield improvement, Logic, Optical engineering, Objectives, Standards development

Read Abstract +

Proceedings Article | 12 May 2005 Paper

Polarized light for resolution enhancement at 70 nm and beyond

Rainer Pforr, Mario Hennig, Max Hoepfl, Tomoyuki Matsuyama, Winfried Meier, Hisashi Nishinaga

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.619863

KEYWORDS: Polarization, Digital signal processing, Critical dimension metrology, Imaging systems, Photomasks, Resolution enhancement technologies, Semiconducting wafers, Scanning electron microscopy, Line edge roughness, Metals

Read Abstract +

Proceedings Article | 1 June 1992 Paper

DN 21, DN 41: negative-tone photoresists for deep-UV lithography

Horst Roeschert, Ralph Dammel, Charlotte Eckes, K. Kamiya, Winfried Meier, Klaus Przybilla, Walter Spiess, Georg Pawlowski

Proceedings Volume 1672, (1992) https://doi.org/10.1117/12.59757

KEYWORDS: Photoresist materials, Polymers, Deep ultraviolet, Lithography, Etching, Absorbance, Scanning electron microscopy, Photoresist developing, Photoresist processing, Dry etching

Read Abstract +

Proceedings Article | 1 June 1991 Paper

Process latitude for the chemical amplification resists AZ PF514 and AZ PN114

Charlotte Eckes, Georg Pawlowski, Klaus Przybilla, Winfried Meier, Michel Madore, Ralph Dammel

Proceedings Volume 1466, (1991) https://doi.org/10.1117/12.46388

KEYWORDS: Deep ultraviolet, X-rays, Floods, Lithography, Electron beam lithography, Semiconducting wafers, Diffusion, Etching, Dry etching, Photoresist processing

Read Abstract +

Proceedings Article | 1 June 1990 Paper

Considerations on the focus latitude for G-line and DUV resists

Ralph Dammel, Charlet Lindley, Winfried Meier, Georg Pawlowski, Juergen Theis, Wolfgang Henke

Proceedings Volume 1264, (1990) https://doi.org/10.1117/12.20177

KEYWORDS: Optical lithography, Lithography, Deep ultraviolet, Photoresist processing, Diffraction, Image processing, Image resolution, Geometrical optics, Photomasks, Computer simulations

Read Abstract +

The demand for enhancement of the resolution in optical lithography requires a shift to shorter exposure wavelengths. The achievable resolution in a lithographic process is usually determined by means of the Rayleigh criterion, minimum resolvable feature size = k1 A/NA in which k1 is an adjustable parameter dependent on resist type and processing parameters. While according to this criterion, resolution is inversely proportional to the numerical aperture, the depth of focus is decreased in an inverse square power dependence according to depth — of—focus = k2 A/(NA)2 For high NA steppers, depth of focus may quickly become the process —limiting factor. It is a distinct drawback of the Rayleigh criteria that the k —factors may only be determined a posteriori from the results of a given process, so that their predictive value is severely limited. In this contribution, computer modeling is used to investigate the depth of focusfresolution problem for different exposure wavelengths. An extension to the photolithography simulator SAMPLE has been made allowing of the simulation of bulk imaging effects which occur during formation of the latent image in the resist layer. The model implemented accounts for the depthwise defocus of the lateral irradiance distribution within the resist film and gives the actual resist profile as a final result. This extended lithography model explains the asymmetries in the photolithographic response observed in the focus offset dependence of submicron resist images when the depth of focus becomes comparable to the resist film thickness. It can be applied to deternzine the absolute position of the resist film suiface with respect to the Gaussian image plane. Furtherniore, the algorithm can be utilized to establish the usable f ocus latitude for a given combination of a projection lens/ resist system from the basic characteristics of lens system and resist material. The general approach closely follows the one suggested by Mack [1] using the PROLITH simulator. SAMPLE results are compared to experiment for g —line exposure, and the treatment is extended to DUV materials.

Showing 5 of 8 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years