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Utkarsha Verma
at Indian Institute of Technology Rajasthan
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Publications (1)
Proceedings Article | 23 February 2012 Paper
The impact of growth rate and barrier thickness on the thermal stability of photoluminescence for coupled InAs/GaAs quantum dot heterostructures with quaternary(InAlGaAs) capping
A. Mandal, U. Verma, S. Chakrabarti
Proceedings Volume 8271, 82710N (2012) https://doi.org/10.1117/12.907867
KEYWORDS: Annealing, Gallium arsenide, Quantum dots, Heterojunctions, Transmission electron microscopy, Solar cells, Indium, Luminescence, Indium arsenide, Diffusion
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