Dr. Tadao Hashimoto Profile

Dr. Tadao Hashimoto

at SixPoint Materials Inc

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Publications (1)

Proceedings Article | 1 February 2019 Presentation + Paper

GaN Substrate development through the near equilibrium ammonothermal (NEAT) method and its application to higher performance GaN-based devices

Tadao Hashimoto, Edward Letts, Daryl Key, Benjamin Jordan, Eric Shang

Proceedings Volume 10926, 109261D (2019) https://doi.org/10.1117/12.2506059

KEYWORDS: Gallium nitride, Crystals, Semiconducting wafers, Oxygen, Surface finishing, Diffraction, Chemical mechanical planarization, X-ray diffraction

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