In this paper we discuss the latest developments of the STRIP instrument of the “Large Scale Polarization Explorer” (LSPE) experiment. LSPE is a novel project that combines ground-based (STRIP) and balloon-borne (SWIPE) polarization measurements of the microwave sky on large angular scales to attempt a detection of the “B-modes” of the Cosmic Microwave Background polarization. STRIP will observe approximately 25% of the Northern sky from the “Observatorio del Teide” in Tenerife, using an array of forty-nine coherent polarimeters at 43 GHz, coupled to a 1.5 m fully rotating crossed-Dragone telescope. A second frequency channel with six-elements at 95 GHz will be exploited as an atmospheric monitor. At present, most of the hardware of the STRIP instrument has been developed and tested at sub-system level. System-level characterization, starting in July 2018, will lead STRIP to be shipped and installed at the observation site within the end of the year. The on-site verification and calibration of the whole instrument will prepare STRIP for a 2-years campaign for the observation of the CMB polarization.
Among the growth techniques employed for preparing the active layer of organic semiconductors, ultra-high vacuum
ones have permitted to achieve the best results in terms of control of thickness of the layer, purity, and for the possibility
to modulate its morphological and structural properties by employing different growth conditions. Organic molecular
beam epitaxy (OMBE) represents a natural choice for the fabrication of high quality field effect transistors especially
when small conjugated oligomers are used as the active material. In spite of the advantages of this technique, the
intrinsic properties of molecular materials (high diffusivity, weak interactions with most substrates, strong tendency to
desorb, etc.) hinder the possibility to achieve a stable layer-by-layer growth, which is on the basis of the technological
development of inorganic devices. Here, we show how the problem can be addressed and solved: by using properly
prepared organic single crystals as substrate, a stable layer-by-layer epitaxial growth of organic semiconductors with the
OMBE technique is demonstrated, exploiting solely the weak van der Waals interactions acting between substrate and
overlayer. With this method, organic heterostructures of oligothiophenes and oligocenes are shown to be easily grown
with a control at the monolayer level, as demonstrated through the discussion of a detailed morphological and optical
characterisation. These results represent the starting point for the development of a technology based on all-organic
nanostructures.
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