Dr. Shinya Itoh Profile

Dr. Shinya Itoh

at Univ of Shizuoka

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Author

Publications (5)

Proceedings Article | 17 February 2011 Paper

A CMOS image sensor with draining only modulation pixels for fluorescence lifetime imaging

Zhuo Li, Keita Yasutomi, Taishi Takasawa, Shinya Itoh, Shoji Kawahito

Proceedings Volume 7875, 78750D (2011) https://doi.org/10.1117/12.877775

KEYWORDS: Luminescence, Diodes, Fluorescence lifetime imaging, Modulation, CMOS sensors, Signal detection, Image processing, Image sensors, Sensors, Neodymium

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Proceedings Article | 29 February 2008 Paper

Noise calculation model and analysis of high-gain readout circuits for CMOS image sensors

Shoji Kawahito, Shinya Itoh

Proceedings Volume 6816, 68160D (2008) https://doi.org/10.1117/12.777641

KEYWORDS: Amplifiers, CMOS sensors, Capacitors, Interference (communication), Capacitance, Transistors, Cadmium sulfide, Analog electronics, Circuit switching, Digital signal processing

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Proceedings Article | 7 March 2005 Paper

Design and implementation of a one-chip wireless camera device for a capsule endoscope

Shinya Itoh, Shoji Kawahito, Tomoyuki Akahori, Susumu Terakawa

Proceedings Volume 5677, (2005) https://doi.org/10.1117/12.587726

KEYWORDS: Cameras, Clocks, Endoscopes, Modulators, Power supplies, Capacitors, CMOS sensors, Image processing, Prototyping, Analog electronics

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Proceedings Article | 16 May 2003 Paper

Photon count imaging using an extremely small capacitor and a high-precision low-noise quantizer

Shoji Kawahito, Shinya Itoh

Proceedings Volume 5017, (2003) https://doi.org/10.1117/12.479714

KEYWORDS: Photon counting, Capacitors, Quantization, CMOS sensors, Sensors, Amplifiers, Imaging systems, Interference (communication), Capacitance, Electrons

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Proceedings Article | 4 September 1998 Paper

Yield management by threshold voltage adjustment in back-end process

Shinya Ito, Ko Noguchi, Tadahiko Horiuchi

Proceedings Volume 3506, (1998) https://doi.org/10.1117/12.323965

KEYWORDS: Hydrogen, Oxides, Ion implantation, Control systems, Annealing, Doping, Field effect transistors, Reliability, Metals, Ions

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