Dr. Shinji Kishimura Profile

Dr. Shinji Kishimura

Chief Engineer at Panasonic Corp

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Publications (13)

Proceedings Article | 4 April 2007 Paper

Measurement and evaluation of water uptake by resists, top coats, stacks, and correlation with watermark defects

Philippe Foubert, Michael Kocsis, Roel Gronheid, Shinji Kishimura, Akimasa Soyano, Kathleen Nafus, Nickolay Stepanenko, Johan De Backer, Nadia Vandenbroeck, Monique Ercken

Proceedings Volume 6519, 65190E (2007) https://doi.org/10.1117/12.713150

KEYWORDS: Digital watermarking, Thin film coatings, Water, Semiconducting wafers, Crystals, Quartz, Silicon, Immersion lithography, Inspection, Polymers

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Proceedings Article | 29 March 2006 Paper

Top coat or no top coat for immersion lithography?

N. Stepanenko, Hyun-Woo Kim, S. Kishimura, D. Van Den Heuvel, N. Vandenbroeck, M. Kocsis, P. Foubert, M. Maenhoudt, M. Ercken, F. Van Roey, R. Gronheid, I. Pollentier, D. Vangoidsenhoven, C. Delvaux, C. Baerts, S. O'Brien, W. Fyen, G. Wells

Proceedings Volume 6153, 615304 (2006) https://doi.org/10.1117/12.660158

KEYWORDS: Thin film coatings, Digital watermarking, Particles, Semiconducting wafers, Immersion lithography, Scanners, Water, Critical dimension metrology, Photomasks, Scatterometry

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Since the moment immersion lithography appeared in the roadmaps of IC manufacturers, the question whether to use top coats has become one of the important topics for discussions. The top coats used in immersion lithography have proved to serve as good protectors from leaching of the resist components (PAGs, bases) into the water. However their application complicates the process and may lead to two side effects. First, top coats can affect the process window and resist profile depending on the material's refractive index, thickness, acidity, chemical interaction with the resist and the soaking time. Second, the top coat application may increase the total amount of defects on the wafer. Having an immersion resist which could work without the top coat would be a preferable solution. Still, it is quite challenging to make such a resist as direct water/resist interaction may also result in process window changes, CD variations, generation of additional defects. We have performed a systematic evaluation of a large number of immersion resist and top coat combinations, using the ASML XT:1250Di scanner at IMEC. The samples for the experiments were provided by all the leading resist and top coat suppliers. Particular attention was paid to how the resist and top coat materials from different vendors interacted with each other. Among the factors which could influence the total amount of defects or CD variations on the wafer were: the material's dynamic contact angle and its interaction with the scanner stage speed, top coat thickness and intermixing layer formation, water uptake and leaching. We have examined the importance of all mentioned factors, using such analytical techniques as Resist Development Analyser (RDA), Quartz Crystal Microbalance (QCM), Mass Spectroscopy (MS) and scatterometry. We have also evaluated the influence of the pre- and pos- exposure rinse processes on the defectivity. In this paper we will present the data on imaging and defectivity performance of the resists with and without the use of top coats. So far we can conclude that top coat/resist approach used in immersion lithography needs some more improvements (i.e. process, materials properties) in order to be implemented in high volume manufacturing.

Proceedings Article | 20 March 2006 Paper

Immersion specific defect mechanisms: findings and recommendations for their control

Michael Kocsis, Dieter Van Den Heuvel, Roel Gronheid, Mireille Maenhoudt, Dizana Vangoidsenhoven, Greg Wells, Nickolay Stepanenko, Michael Benndorf, Hyun Woo Kim, Shinji Kishimura, Monique Ercken, Frieda Van Roey, S. O'Brien, Wim Fyen, Philippe Foubert, Richard Moerman, Bob Streefkerk

Proceedings Volume 6154, 615409 (2006) https://doi.org/10.1117/12.660432

KEYWORDS: Semiconducting wafers, Thin film coatings, Water, Particles, Scanners, Immersion lithography, Manufacturing, Scanning electron microscopy, Space operations, Distortion

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Proceedings Article | 4 May 2005 Paper

Impact of water and top-coats on lithographic performance in 193-nm immersion lithography

Shinji Kishimura, Roel Gronheid, Monique Ercken, Mireille Maenhoudt, Takahiro Matsuo, Masayuki Endo, Masaru Sasago

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.598532

KEYWORDS: Ions, Immersion lithography, Water, Lithography, Optical lithography, Analytical research, Quartz, Crystals, Semiconducting wafers, Surface roughness

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Proceedings Article | 14 May 2004 Paper

Resist interaction in 193-/157-nm immersion lithography

Shinji Kishimura, Masayuki Endo, Masaru Sasago

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.534759

KEYWORDS: Water, Immersion lithography, Monochromatic aberrations, Polymers, Ions, Photoresist processing, FT-IR spectroscopy, Semiconducting wafers, Silicon, Metals

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Proceedings Article | 24 July 2002 Paper

New 157-nm resist platform based on etching model for fluoropolymers

Shinji Kishimura, Masayuki Endo, Masaru Sasago

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474219

KEYWORDS: Etching, Polymers, Resistance, Chemical species, Oxides, Fluorine, Oxygen, Transparency, Carbon, Absorbance

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Proceedings Article | 1 July 2002 Paper

Fine pattern replication on 10 x 10-mm exposure area using ETS-1 laboratory tool in HIT

K. Hamamoto, Takeo Watanabe, Hideo Hada, Hiroshi Komano, Shinji Kishimura, Shinji Okazaki, Hiroo Kinoshita

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472272

KEYWORDS: Photomasks, Semiconducting wafers, Extreme ultraviolet lithography, Wafer-level optics, Chemically amplified resists, Mirrors, Chromium, Edge roughness, Silicon, Scanning electron microscopy

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Proceedings Article | 23 June 2000 Paper

Approach for VUV positive resists using photodecomposable polymers

Shinji Kishimura, Akiko Katsuyama, Masaru Sasago, Masamitsu Shirai, Masahiro Tsunooka

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388318

KEYWORDS: Polymers, Vacuum ultraviolet, Excimer lasers, Lithography, Transparency, Photoresist processing, Transmittance, FT-IR spectroscopy, Imaging systems, Absorption

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Proceedings Article | 29 June 1998 Paper

ArF excimer laser lithography with bottom antireflective coating

Shinji Kishimura, Makoto Takahashi, Keisuke Nakazawa, Takeshi Ohfuji, Masaru Sasago, Masaya Uematsu, Tohru Ogawa, Hiroshi Ohtsuka

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310760

KEYWORDS: Lithography, Reflectivity, Excimer lasers, Etching, Refractive index, Silicon, Dry etching, Bottom antireflective coatings, Antireflective coatings, Spectroscopy

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Proceedings Article | 29 June 1998 Paper

Dissolution-rate analysis of ArF resist polymers based on the percolation model

Atsuko Yamaguchi, Shinji Kishimura, Nobuyuki Matsuzawa, Takeshi Ohfuji, Tomoaki Tanaka, Seiichi Tagawa, Masaru Sasago

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312365

KEYWORDS: Diffusion, Particles, Polymers, Platinum, Molecules, Chemical analysis, Monte Carlo methods, Electronics, Polymerization, 3D modeling

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Proceedings Article | 29 June 1998 Paper

Effect of the dissolution contrast on process margins in 193-nm lithography

Makoto Takahashi, Shinji Kishimura, Takuya Naito, Takeshi Ohfuji, Masaru Sasago

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312409

KEYWORDS: Lithography, Resolution enhancement technologies, Photoresist processing, Polymers, Phase shifts, Photomasks, Optical lithography, Solids, Lithographic illumination, Transparency

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Proceedings Article | 7 July 1997 Paper

Dry etching resistance of resist base polymer and its improvement

Shinji Kishimura, Yoshika Kimura, Junjiro Sakai, Kouichirou Tsujita, Yasuji Matsui

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275894

KEYWORDS: Polymers, Resistance, Etching, Dry etching, Deep ultraviolet, Chlorine, Plasma, Temperature metrology, Molecules, Absorbance

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Proceedings Article | 1 June 1990 Paper

Germanium-containing resist for bilayer resist process

Hirofumi Fujioka, Hiroyuki Nakajima, Shinji Kishimura, Hitoshi Nagata

Proceedings Volume 1262, (1990) https://doi.org/10.1117/12.20108

KEYWORDS: Reactive ion etching, Polymers, Germanium, Silicon, Photoresist processing, Deep ultraviolet, Electron beams, Etching, Semiconducting wafers, Oxides

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Showing 5 of 13 publications

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