This paper reviews some recent developments in the high-speed photodiodes for 2.0-4.0 im spectral range. We report
investigation, design and fabrication of broad bandwidth (2 GHz) GaInAsSb/GaA1AsSb p-i-n photodiodes operating in
the 0.9-2.4 μm spectral range with submicroampere dark cunent. As well, we present InAs-based and InAs/InAsSbP
photodiodes with long-wavelength cutoff of 3.8 μm. An analysis of the photodiode performance through the
investigation of current-voltage, capacitance-voltage and spectral responsivity characteristics was carried out. Also, noise
and speed-response characteristics were studied. In addition to high-speed response and low noise level these
photodiodes offer room-temperature operation and hence are commercially viable. These devices are of great interest for
a wide range of applications, such as high-resolution laser diode spectroscopy of gases and molecules, eye-safe laser
rangefinding systems, the free-space optical link as well as systems of optical fiber communication.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.