In this study, with the use of in-situ ultrafast optical detection and sub-picosecond laser systems, we resolve the influence of the various energetic species in an atmospheric plasma on the resulting electronic and career response of semiconductors in real time. Through the development of new plasma diagnostics with sub-picosecond to microsecond temporal resolution, we measure the optical response of material surfaces subjected to various types, intensities, and temporal profiles of atmospheric pressure plasma excitations.
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