Dr. Roman Kris Profile

Dr. Roman Kris

Algorithm Developer at Applied Materials Israel Ltd

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Author

Publications (19)

Proceedings Article | 20 March 2020 Presentation + Paper

Contact etch process control application for advanced NAND memory structures

R. Kris, G. Klebanov, I. Friedler, E. Frishman, S. Duvdevani Bar, J. Geva, V. Mirovoy, N. Teomim, D. Rathore, D. Rogers, J. Chess, B. Watson

Proceedings Volume 11325, 113251F (2020) https://doi.org/10.1117/12.2559399

KEYWORDS: Etching, Scanning electron microscopy, Process control, Critical dimension metrology, Metrology, Image processing, Signal processing, Shape analysis, Image classification, Image analysis, Machine learning

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CD measurements of advanced 3D-NAND Staircase process require development of new approaches in CD metrology [1]. The current CD SEM Contact Analysis used for 3D-NAND assumes that process control could be provided through a set of geometric parameters defining the contact shape (i.e. parameters of contact shape elliptic fit such as equivalent contact top diameter (Top CD), equivalent contact bottom diameter (Bottom CD), ellipticity, minor, major axis). The limitation of this approach for process control of complex structures was considered, and a new approach based on Grey Level Analysis of contact features in SEM images was proposed. However, this analysis is not enough for controlling the complicated 3D-NAND Staircase formation process steps, as contact holes with same geometric parameters but different depths cannot be separated by traditional CD SEM metrology measurement procedure (Figures 1 and 2). Thus, traditional CD SEM approach needs revisiting in order to work in situations where process control requires analysis of sophisticated Grey Level uniformity distribution. We propose a novel approach combining traditional metrology with machine learning methods. The essence of this new approach is to combine Grey Level attributes and traditional CD measured geometric parameters of the feature, obtained by traditional CD metrology flow, in a classification scheme (Figures 2 and 3). The proposed approach was qualified at Micron site demonstrating ~98% purity classification results.
The proposed approach is generic and can be extended to a large variety of process control applications. Enhancing regular metrology flow with the capability to classify Etch process quality eliminates the need for the expensive and destructive cross-sectional SEM analysis. Furthermore, this method has a clear advantage during the early R&D phase of process development as it increases the usefulness of the in-line metrology tool while the process is still immature and unstable.

Proceedings Article | 8 April 2019 Paper

Macro CDSEM 2D metrology supporting advanced DRAM patterning

R. Kris, G. Klebanov, I. Schwarzband, E. Sommer, L. Gershtein, B. Mathew, E. Noifeld, S. Levy, R. Alkoken, O. Novak, H. Miroku, D. Rathore , S. Pastur, S. Duvdevani-Bar, T. Bar-On, I. Horikawa

Proceedings Volume 10959, 109592S (2019) https://doi.org/10.1117/12.2515233

KEYWORDS: Metrology, Critical dimension metrology, Process control, Scanning electron microscopy, Optical lithography, Algorithm development, Detection and tracking algorithms, Mathematical modeling, Image enhancement, Computer aided design

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Proceedings Article | 13 March 2018 Paper

Automated mask and wafer defect classification using a novel method for generalized CD variation measurements

V. Verechagin, R. Kris, I. Schwarzband, A. Milstein, B. Cohen, A. Shkalim, S. Levy, D. Price, E. Bal

Proceedings Volume 10585, 1058531 (2018) https://doi.org/10.1117/12.2302714

KEYWORDS: Critical dimension metrology, Photomasks, Semiconducting wafers, Metrology, Printing, Inspection, Scanning electron microscopy, Optical proximity correction, Optical lithography

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Proceedings Article | 28 March 2016 Paper

Edge roughness characterization of advanced patterning processes using power spectral density analysis (PSD)

Shimon Levi, Ishai Schwarzband, Roman Kris, Ofer Adan, Elly Shi, Ying Zhang, Kevin Zhou

Proceedings Volume 9782, 97820I (2016) https://doi.org/10.1117/12.2220814

KEYWORDS: Line edge roughness, Etching, Line width roughness, Scanning electron microscopy, Edge roughness, Optical lithography, Signal to noise ratio, Statistical analysis, Lithography, Stochastic processes

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SPIE Journal Paper | 1 October 2014

Addressing FinFET metrology challenges in 1× node using tilt-beam critical dimension scanning electron microscope

Xiaoxiao Zhang, Hua Zhou, Zhenhua Ge, Alok Vaid, Deepasree Konduparthi, Carmen Osorio, Stefano Ventola, Roi Meir, Ori Shoval, Roman Kris, Ofer Adan, Maayan Bar-Zvi

JM3, Vol. 13, Issue 04, 041407, (October 2014) https://doi.org/10.1117/12.10.1117/1.JMM.13.4.041407

KEYWORDS: Metrology, Transmission electron microscopy, Semiconducting wafers, Scanning electron microscopy, Electron microscopes, Process control, 3D metrology, Diffractive optical elements, Oxides

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Proceedings Article | 2 April 2014 Paper

Addressing FinFET metrology challenges in 1X node using tilt-beam CD-SEM

Xiaoxiao Zhang, Hua Zhou, Zhenhua Ge, Alok Vaid, Deepasree Konduparthi, Carmen Osorio, Stefano Ventola, Roi Meir, Ori Shoval, Roman Kris, Ofer Adan, Maayan Bar-Zvi

Proceedings Volume 9050, 90500C (2014) https://doi.org/10.1117/12.2046881

KEYWORDS: Transmission electron microscopy, Metrology, Semiconducting wafers, Process control, 3D metrology, Diffractive optical elements, Oxides, Calibration, Scanning electron microscopy

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Proceedings Article | 10 April 2012 Paper

Roughness metrology of gate all around silicon nanowire devices

Shimon Levi, Ishai Schwarzband, Roman Kris, Ofer Adan, Guy Cohen, Sarunya Bangsaruntip, Lynne Gignac

Proceedings Volume 8324, 83240H (2012) https://doi.org/10.1117/12.918402

KEYWORDS: Scanning electron microscopy, Line edge roughness, Stochastic processes, Metrology, Semiconducting wafers, Silicon, Critical dimension metrology, Calibration, Smoothing, Nanowires

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Proceedings Article | 4 April 2008 Paper

Physical matching of CD-SEM: noise analysis and verification in FAB environment

Uwe Kramer, Alessandra Navarra, Goeran Fleischer, Jan Kaiser, Frank Voss, Galit Zuckerman, Roman Kris, Igal Ben-Dayan, Elad Sommer, Amir Len, Shalev Dror, Dirk Schöne, Stefano Ventola

Proceedings Volume 6922, 69221R (2008) https://doi.org/10.1117/12.776865

KEYWORDS: Signal to noise ratio, Scanning electron microscopy, Calibration, Critical dimension metrology, Image acquisition, Interference (communication), Sensors, Visualization, Metrology, Statistical analysis

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CD-SEMs fleet matching is a widely discussed subject and various approaches and procedures to determine it were described in the literature [1,2,4-6]. The different approaches for matching are all based on statistical treatment of CD measurements that are performed on dedicated test structures. The test structures are a limited finite set of features, thus the matching results should be treated as valid only for the specific defined set of test features. The credibility of the matching should be in question for different layers and specifically production layers. Since matching is crucial for reliable process monitoring by a fleet of CD-SEMs, the current matching approaches must be extended so that the matching will be only tool dependent and reproducible on all layers regardless their specific material or topographic characteristics. In our previous work [1] the new approach named "Physical Matching" was introduced and a new matching procedure based on the direct estimation of tool physical parameters was described. This approach extends the conventional matching methods to enable significant improvement of the matching between CD-SEM tools in production environment. In this work we present results of applying the physical matching method in FAB environment by using the physical parameters of the brightness and SNR, extend it to noise frequency domain characteristics monitoring, and enhanced collection uniformity. Improving the collection uniformity is also demonstrated and proved to be a significant factor. The advantage of the physical matching with noise spectra analysis approach for a case study is demonstrated. This method will enable detection of specific reasons for mismatching between the tools, based on analysis of specific frequencies that are resulted from known mechanical/electrical noise. The proposed procedure allows tool problems fixing before CD measurements are affected. In order to get a reliable visualization of the difference between two systems, new automatic and manual tool finger print methods were developed. The application of the proposed approach to vendor to vendor matching problem is considered.

Proceedings Article | 12 April 2007 Paper

Physical matching versus CD matching for CD SEM

Roman Kris, Galit Zuckerman, Elad Sommer, Zion Hadad, Shalev Dror, Aviram Tam, Naftali Shcolnik

Proceedings Volume 6518, 65180O (2007) https://doi.org/10.1117/12.711768

KEYWORDS: Signal to noise ratio, Scanning electron microscopy, Sensors, Interference (communication), Critical dimension metrology, Target detection, Image acquisition, Etching, Calibration, Statistical analysis

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CD-SEMs fleet matching is a widely discussed subject and various approaches and procedures to determine it were described in the literature. The different approaches for matching are all based on statistical treatment of regular CD measurements that are performed on dedicated test structures. The test structures are a limited finite set of features, thus the matching results should be treated as valid only for the specific defined set of test features. The credibility of the matching should be in question for different layers and specifically production layers. Since matching is crucial for reliable process monitoring by a fleet of CD-SEMs, the current matching approaches (such as TMU) must be extended so that the matching will be only tool dependent and reproducible on all layers regardless their specific material or topographic characteristics. In this work the term "Physical Matching" is introduced and a new matching procedure based on physical parameters is described. This approach extends the conventional matching methods to enable significant improvement of the matching between CD-SEM tools in production environment. To study and demonstrate the physical matching, we focus on the limited parameters set - the image brightness and Signal/Noise ratio(SNR). We test the sensitivity of CD measurements to changes in these parameters both on different test layers - Etch and Litho. We show that sensitivity of CD based measurements is low and reasonable change of the image brightness or SNR has small effect. The advantage of the physical matching approach for case study is demonstrated. The improved matching procedures are based on new targets that are used to measure the above image parameters directly. This way it is possible to characterize correctly the physical state of the measurement tool and guarantee the same image characteristics which in turn guarantee improved matching on all layers. In the framework of the proposed matching approach a proper determination of the minimal set of physical parameters that is needed to guarantee CD-SEM tools stability and matching should be included.

Proceedings Article | 5 April 2007 Paper

MacroCD contact ellipticity measurements for lithography tool qualification

Ilan Englard, Eelco van Setten, Gert-Jan Janssen, Peter Vanoppen, Ingrid Minnaert-Janssen, Frank Duray, Ofer Adan, Amit Moran, Liraz Gershtein, Ram Peltinov

Proceedings Volume 6518, 651837 (2007) https://doi.org/10.1117/12.713469

KEYWORDS: Monochromatic aberrations, Semiconducting wafers, Finite element methods, Process control, Lithography, Critical dimension metrology, Distortion, Control systems, Wafer testing, Manufacturing

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Proceedings Article | 24 March 2006 Paper

Bias reduction in roughness measurement through SEM noise removal

R. Katz, C. Chase, R. Kris, R. Peltinov, J. Villarrubia, B. Bunday

Proceedings Volume 6152, 61524L (2006) https://doi.org/10.1117/12.661135

KEYWORDS: Critical dimension metrology, Line width roughness, Scanning electron microscopy, Standards development, Line edge roughness, Semiconductors, Image processing, Etching, Semiconducting wafers, Signal to noise ratio

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Proceedings Article | 9 November 2005 Paper

Advanced edge roughness measurement application for mask metrology

D. Chase, R. Kris, R. Katz, A. Tam, L. Gershtein, R. Falah, N. Wertsman

Proceedings Volume 5992, 59924N (2005) https://doi.org/10.1117/12.632439

KEYWORDS: Photomasks, Metrology, Edge roughness, Manufacturing, Reticles, Critical dimension metrology, Scanning electron microscopy, Integrated circuits, Line edge roughness, Photomask technology

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Proceedings Article | 10 May 2005 Paper

Inline sidewall angle monitoring of memory capacitor profiles

Ben Rathsack, Scott Bushman, Francis Celii, Stephen Ayres, Roman Kris

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.600750

KEYWORDS: Capacitors, Etching, Scanning electron microscopy, Atomic force microscopy, Scatterometry, Composites, Metrology, 3D modeling, Semiconducting wafers, 3D metrology

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The integration of embedded ferroelectric random access memory (FRAM) into a standard CMOS flow requires significant control and characterization of the patterned capacitor sidewall angle. The electrical functionality of the FRAM capacitor is highly dependent on the post-etch sidewall characteristics of the TiAlN hardmask and Ir/PZT/Ir capacitor film stack. In this study, we explored various options for determining the sidewall profile of these capacitors including scanning electron microscope (SEM), atomic force microscopy (AFM) and scatterometry. A series of capacitor samples with ranges of sidewall slopes from 60 degrees to 80 degrees was generated to test each measuring technique's robustness. All of the techniques demonstrated relatively accurate sidewall angle measurements of the high-angle capacitor profiles relative to cross-section SEMs. However, the CD SEM had difficulty identifying the top edge of the low-angle capacitor samples due to the large amount of profile roughness, which induced a large measurement error range. Additional optimization is required to improve the CD SEM's precision, before it would be a viable in-line monitor for the FRAM process. The AFM provided good accuracy and precision on the high-angle capacitor profiles, but the tip size limited the measurements to spaces larger than 120 nm. Furthermore, the AFM had a long move-acquire-measure (MAM) time of 5 minutes/site, which limited its throughput as an inline monitor. The scatterometer predicted bottom-stack sidewall angle measurements (2 trapezoid model) that were consistent with the cross-section SEMs, and it produced the lowest across wafer sidewall angle range. It also had the fastest MAM time of 5 seconds/site compared to the other techniques. However, it was difficult to generate an accurate scatterometry model due to the complex optical film stack that incorporated low surface reflectivity and higher surface roughness. While each technique had limitations, scatterometry appeared to be the most capable of inline sidewall angle monitoring.

Proceedings Article | 27 January 2005 Paper

Advanced 2D structures metrology with CD-SEM for OPC challenges

Roman Kris, Aviram Tam, Ram Peltinov, Ovadya Menadeva, Ofer Adan, Nadav Wertsman, Arcadiy Vilenkin

Proceedings Volume 5645, (2005) https://doi.org/10.1117/12.575344

KEYWORDS: Metrology, Algorithm development, Process control, OLE for process control, Optical proximity correction, Scanning electron microscopy, Shape analysis, Optical lithography, Reticles

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Proceedings Article | 27 January 2005 Paper

Verification of height and sidewall angle SEM metrology accuracy using Monte Carlo simulation

Roman Kris, Ofer Adan, Aviram Tam, Albert Karabekov, Ovadya Menadeva, Ram Peltinov, Oren Zoran, Nadav Wertsman, Arcadiy Vilenkin

Proceedings Volume 5645, (2005) https://doi.org/10.1117/12.575390

KEYWORDS: 3D metrology, Scanning electron microscopy, Monte Carlo methods, 3D modeling, Metrology, Optical lithography, Gallium, Semiconductors, Tolerancing

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Proceedings Article | 20 August 2004 Paper

Mask metrology 2D application for measurement of OPC features and corner roundness

Roman Kris, Ovadya Menadeva, Aviram Tam, Ram Peltinov, Liraz Segal, Nadav Wertsman, Naftali Shcolnik, Gidon Gottlib, Arcadiy Vilenkin

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557808

KEYWORDS: Metrology, Reticles, Scanning electron microscopy, Optical proximity correction, Algorithm development, Photomasks, Image segmentation, OLE for process control, Image processing, Feature extraction

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Proceedings Article | 24 May 2004 Paper

CD-SEM application for generic analysis of two-dimensional features on wafers and reticles

Roman Kris, Aviram Tam, Ovadya Menadeva, Ram Peltinov, Liraz Segal, Nadav Wertsman, Ofer Adan, Naftali Shcolnik, Gidi Gottlib, Arcadiy Vilenkin

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.539441

KEYWORDS: Metrology, Semiconducting wafers, Reticles, Shape analysis, Scanning electron microscopy, Process control, Optical proximity correction, Algorithm development, Inspection, Optical lithography

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Proceedings Article | 24 May 2004 Paper

Height and sidewall angle SEM metrology accuracy

Roman Kris, Ofer Adan, Aviram Tam, Albert Karabekov, Ovadya Menadeva, Ram Peltinov, Ayelet Pnueli, Oren Zoran, Arcadiy Vilenkin

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.537938

KEYWORDS: Scanning electron microscopy, Metrology, 3D metrology, Inspection, Process control, Optical lithography, Silver, Semiconductors, Monte Carlo methods, 3D modeling

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Proceedings Article | 17 December 2003 Paper

Corner roundness and contact area algorithms for reticle metrology through the use of region connectivity extraction

Roman Kris, Gidi Gottlib, Ovadya Menadeva, Ram Peltinov, Liraz Seagl, Naftali Shcolnik, Aviram Tam, Arcadiy Vilenkin

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518356

KEYWORDS: Reticles, Algorithm development, Metrology, Scanning electron microscopy, Feature extraction, Critical dimension metrology, Photomasks, OLE for process control, Optical proximity correction, Detection and tracking algorithms

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Showing 5 of 19 publications

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