Mr. Robert J. Naber Profile

Robert J. Naber

Principal Consultant

SPIE Involvement:

Author

Area of Expertise:

DFM , Double Patterning , Cross functional integrator , Plasma , Disruptive solutions , Lithography

Websites:

Personal Website | Company Website

Publications (20)

Proceedings Article | 16 November 2007 Paper

Pattern split rules! A feasibility study of rule based pitch decomposition for double patterning

Anton van Oosten, Peter Nikolsky, Judy Huckabay, Ronald Goossens, Robert Naber

Proceedings Volume 6730, 67301L (2007) https://doi.org/10.1117/12.746689

KEYWORDS: Double patterning technology, Design for manufacturing, Algorithm development, Deep ultraviolet, Rule based systems, Optical lithography, Model-based design, Performance modeling, Logic, Photomasks

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Proceedings Article | 30 October 2007 Paper

Litho-aware extraction for the 32nm double patterning node

Judy Huckabay, Quentin Chen, Craig Thayer, Robert Naber

Proceedings Volume 6730, 67300W (2007) https://doi.org/10.1117/12.747409

KEYWORDS: Photomasks, Resistance, Metals, Error analysis, Capacitance, Double patterning technology, Device simulation, Overlay metrology, Lithography, Resolution enhancement technologies

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Proceedings Article | 20 October 2006 Paper

Process results using automatic pitch decomposition and double patterning technology (DPT) at k1eff <0.20

Judy Huckabay, Wolf Staud, Robert Naber, Anton van Oosten, Peter Nikolski, Stephen Hsu, R. Socha, M. Dusa, Donis Flagello

Proceedings Volume 6349, 634910 (2006) https://doi.org/10.1117/12.687747

KEYWORDS: Double patterning technology, Photomasks, Optical proximity correction, Semiconducting wafers, Lithography, Neodymium, Logic, Optical lithography, Scanners, Resolution enhancement technologies

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Proceedings Article | 20 May 2006 Paper

Simultaneous layout, process, and model optimization within an integrated design-for-yield environment

Dmitri Lapanik, Lynn Cai, Chung-Shin Kang, Bob Naber, Jason Sweis, Wolf Staud

Proceedings Volume 6283, 62832S (2006) https://doi.org/10.1117/12.681806

KEYWORDS: Process modeling, Optimization (mathematics), Resolution enhancement technologies, Manufacturing, Optical proximity correction, Photomasks, Calibration, Image processing, Semiconducting wafers, Systems modeling

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Proceedings Article | 20 May 2006 Paper

Automatic pitch decomposition for improved process window when printing dense features at k₁eff<0.20

Judy Huckabay, Wolf Staud, Robert Naber, Mircea Dusa, Donis Flagello, Robert Socha

Proceedings Volume 6283, 62830T (2006) https://doi.org/10.1117/12.681853

KEYWORDS: Photomasks, Double patterning technology, Optical proximity correction, Printing, Semiconducting wafers, Critical dimension metrology, Lithography, Feature extraction, 3D modeling, Manufacturing

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Proceedings Article | 20 May 2006 Paper

Unifying the RET design flow with portable modeling information

Jason Sweis, Wolf Staud, Bob Naber, Tom Laidig, Doug Van Denbroeke

Proceedings Volume 6283, 62832V (2006) https://doi.org/10.1117/12.681812

KEYWORDS: Resolution enhancement technologies, Process modeling, Data modeling, Lithography, Calibration, Manufacturing, Optical proximity correction, Photomasks, Design for manufacturing, Scanners

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Proceedings Article | 28 June 2005 Paper

Improved cycle time of mask repair by optimizing nanomachining with photolithographic imaging simulation

Peter Brooker, Tod Robinson, John Lewellen, Bob Naber, Ron Bozak, David Lee

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617346

KEYWORDS: Photomasks, Lithography, Semiconducting wafers, Reticles, Quartz, Phase shifts, Image enhancement, Phase shifting, Image transmission, Chromium

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Proceedings Article | 1 August 2002 Paper

Raster scan patterning solution for 100- and 70-nm OPC masks

Frank Abboud, Ki-Ho Baik, Varoujan Chakarian, Damon Cole, Robert Dean, Mark Gesley, Herb Gillman, William Moore, Mark Mueller, Robert Naber, Thomas Newman, Romin Puri, Frederick Raymond, Mario Rougieri

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476923

KEYWORDS: Photomasks, Raster graphics, Optical proximity correction, Etching, Control systems, Point spread functions, Optical lithography, Electron beam lithography, Lithography, Edge roughness

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Proceedings Article | 11 March 2002 Paper

100-nm OPC mask patterning using raster-scan 50-kV pattern generation technology

Frank Abboud, Ki-Ho Baik, Varoujan Chakarian, Damon Cole, Jay Daniel, Robert Dean, Mark Gesley, Robert Naber, Thomas Newman, Frederick Raymond, David Trost, Mark Wiltse, William DeVore

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.491928

KEYWORDS: Photomasks, Optical proximity correction, Raster graphics, Optical lithography, Electron beam lithography, Edge roughness, Lithography, Model-based design, Point spread functions, Photoresist processing

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Proceedings Article | 5 September 2001 Paper

High-productivity mask writer with broad operating range

Ki-Ho Baik, Varoujan Chakarian, Bob Dean, Maiying Lu, Robert Naber, Thomas Newman, Mark Wiltse, Frank Abboud

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438401

KEYWORDS: Photomasks, Raster graphics, Photoresist processing, Optical proximity correction, Chemically amplified resists, Optical lithography, RGB color model, Lithography, Semiconductors, Critical dimension metrology

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Proceedings Article | 30 December 1999 Paper

Extension of graybeam writing for the 130-nm technology node

Jan Chabala, Frank Abboud, Charles Sauer, Suzanne Weaver, Maiying Lu, Henry Pearce-Percy, Ulrich Hofmann, Matthew Vernon, Dinh Ton, Damon Cole, Robert Naber

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373345

KEYWORDS: Lithography, Photomasks, Printing, Critical dimension metrology, Scattering, Metrology, Dry etching, Etching, Charged particle optics, Error analysis

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Proceedings Article | 28 July 1997 Paper

Multipass gray printing for the new MEBES 4500S mask lithography system

Frank Abboud, Robert Dean, Janine Doering, W. Eckes, Mark Gesley, Ulrich Hofmann, Terry Mulera, Robert Naber, M. Pastor, Wayne Phillips, John Raphael, Frederick Raymond, Charles Sauer

Proceedings Volume 3096, (1997) https://doi.org/10.1117/12.277295

KEYWORDS: Printing, Control systems, Photomasks, Lithography, Electron beam lithography, Reticles, Temperature metrology, Laser scattering, Scattering, Modulation

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Proceedings Article | 24 July 1996 Paper

Evaluation of the MEBES 4500 reticle writer to commercial requirements of 250-nm design rule IC devices

Frank Abboud, David Alexander, Thomas Coleman, Allen Cook, Leonard Gasiorek, Robert Naber, Frederick Raymond, Charles Sauer

Proceedings Volume 2793, (1996) https://doi.org/10.1117/12.245233

KEYWORDS: Reticles, Metrology, Calibration, Raster graphics, Composites, Photomasks, Manufacturing, Distortion, Mirror stabilization, Control systems

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Proceedings Article | 8 December 1995 Paper

Investigation of MEBES 4500 system composite performance

Jim DeWitt, Joe Watson, David Alexander, Allen Cook, Leonard Gasiorek, Mark Mayse, Robert Naber, Wayne Phillips, Charles Sauer

Proceedings Volume 2621, (1995) https://doi.org/10.1117/12.228189

KEYWORDS: Composites, Metrology, Reticles, Overlay metrology, Calibration, Phase shifts, Printing, Nickel, Image registration, Prototyping

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Proceedings Article | 8 December 1995 Paper

Method to produce a reference grid artifact for matching a MEBES 4500 system to an external reference

Jim DeWitt, Joe Watson, Thomas Coleman, Leonard Gasiorek, Michael Lubin, Robert Naber, William Wang, Keith Wires

Proceedings Volume 2621, (1995) https://doi.org/10.1117/12.228172

KEYWORDS: Metrology, Photomasks, Composites, Image processing, Software development, Phase shifts, Calibration, Lithography, Optical alignment, Reticles

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Proceedings Article | 3 July 1995 Paper

Preliminary methodology investigation of mask pattern fidelity for 250-nm design rules

Thomas Coleman, Charles Sauer, Robert Naber, Henry Chris Hamaker

Proceedings Volume 2512, (1995) https://doi.org/10.1117/12.212810

KEYWORDS: Printing, Photomasks, Manufacturing, Chlorine, Lithography, Visualization, Scanning electron microscopy, Image quality, Quartz, Statistical analysis

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Techniques have been developed that can quickly and accurately measure corner rounding and contact fill as key indicators of pattern fidelity. Using these techniques, we have examined writing variables for their effect on the lithographic quality of 1.0 micrometers contact. A small contact is perhaps the most demanding figure to achieve, so the results shown can be considered the worst case for 4X radicle manufacturing at 250 nm design rules. A MEBES 4500 was used as the writing tool, using PBS resist on quartz masks. Standard printing methods, single-phase printing (SPP) and multiphase printing (2X MPP) were examined. Results indicate that excellent corner rounding results can be achieved with small address sizes, regardless of the writing strategy or the dose used. As expected, larger spot sizes increase the amount of corner rounding, regardless of the address. As the pattern address is increased, judicious choices of spot size reduce potential pattern fidelity loss when imaging small contracts and other fine features. Multiphase printing is a technique that offers advantages to the user. Its use of offset scan voting (OSV) is a significant factor in reducing placement errors. MPP (2X) has an additional advantage of providing higher dosages. This provides flexibility in resist choices and in the selection of a process window. With 2X MPP, the user has a wide range of addresses and spot sizes that will give excellent results. The dynamic range of operating conditions possible with 2X MPP when writing 1.0 micrometers contacts is a reduced subset of those available using SPP, due to the 2X writing grid (output address). Implementation of 2X MPP has been limited on previous MEBES models due to increased write times of multipass writing. The MEBES 4500 data path supports 2X MPP with write times that approximate SPP. The practical operating envelope of both writing strategies are detailed in this paper. Overall, the MEBES 4500 has a large dynamic operating range. When used with a high resolution process, MEBES 4500 provides excellent pattern fidelity to support requirements of 250 nm design rules.

Proceedings Article | 7 December 1994 Paper

MEBES 4000 optimization and characterization of MEBES 4500

Jim DeWitt, J. Millino, Joe Watson, Robert Dean, Frederick Raymond, D. McClure, Leonard Gasiorek, Frank Abboud, Robert Naber

Proceedings Volume 2322, (1994) https://doi.org/10.1117/12.195805

KEYWORDS: Composites, Photomask technology, Calibration, Photoresist processing, Control systems, Metrology, Process control, Photomasks, Optical lithography, Critical dimension metrology

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Proceedings Article | 3 November 1994 Paper

MEBES(reg.) reticle writers for 350-nm and 250-nm design rules

Frank Abboud, Robert Naber, Robert Dean, Charles Sauer

Proceedings Volume 2254, (1994) https://doi.org/10.1117/12.191961

KEYWORDS: Photomasks, X-ray technology, Reticles, Composites, Raster graphics, X-rays, Photoresist processing, Metrology, Distortion, Line edge roughness

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Proceedings Article | 26 March 1993 Paper

Alignment technique for second-level exposure of phase-shifting masks using 10-kV raster-scan electron-beam lithography system

Frank Abboud, Jorge Freyer, Andrew Muray, Robert Naber, John Poreda, John Thomas

Proceedings Volume 1809, (1993) https://doi.org/10.1117/12.142148

KEYWORDS: Optical alignment, Photomasks, Etching, Quartz, Phase shifts, Overlay metrology, Lithography, Scanning electron microscopy, Chromium, Signal processing

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Proceedings Article | 1 June 1990 Paper

Enhanced structures for through-the-lens alignment with DUV lithography

Andrew Sabersky, Robert Naber, Kevin Riddell

Proceedings Volume 1264, (1990) https://doi.org/10.1117/12.20194

KEYWORDS: Optical alignment, Semiconducting wafers, Reticles, Interference (communication), Metals, Signal detection, Optical lithography, Deep ultraviolet, Target detection, Mirrors

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Showing 5 of 20 publications

Conference Committee Involvement (4)

SPIE Photomask Technology

17 September 2007 | Monterey, United States

SPIE Photomask Technology

18 September 2006 | Monterey, United States

64-to 256-Megabit Reticle Generation: Technology Requirements and Approaches: A Critical Review

1 January 1994 |

64-to 256-Megabit Reticle Generation: Technology Requirements and Approaches: A Critical Review

22 September 1993 |

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