This paper reports results of a theoretical study of multilayer Ge/Si infrared photodetector parameters calculations, these calculations are of certain characteristics of detectors such as: dark current photocurrent and detectivity.
The work discusses infrared photodetectors with quantum dots of germanium on silicon. The calculation of certain
characteristics of detectors such as: dark current and detectivity in several modes: thermal generation mode, generation-recombination
mode and background limited performance mode.
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