We report on a compact, on-chip, and inexpensive Raman spectrometer platform that provides 6 orders of magnitude enhancement of Raman signal in the near-IR spectral range of 0.7-1.2μm with a laser excitation of 785 nm. It is based on microring resonators integrated with sinusoidal photonic crystal (MRR-SPC) both in the ring-resonator and in the bus waveguide. A low-loss Si3N4 waveguide is chosen to meet the requirements of high index contrast and ultracompact design. The proposed MRR-SPC can find its applications in bio/chemical ware fare sensing, chemical sensing, lab-on-a-chip systems for mobile and portable devices.
This paper reports on the characteristics of the plasmonic phenomena in diamond FET devices at THz frequencies. We present a detailed numerical study of the terahertz resonant response of n-diamond TeraFETs as a function of temperature and channel length, demonstrate their potential for emerging terahertz applications, and compare their performance with that for p-diamond devices. The results show that short channel n-diamond TeraFETs exhibit a resonant response at room and cryogenic temperatures. We also report on the impact of the amplitude of the impinged THz signal and gate-to-channel separation on the induced voltage response. In our analysis, we have accounted for the effect of the viscosity of the electron fluid in the channel which is one of the major contributors to the damping of the plasma waves.
Flexible pressure sensors with high sensitivity have drawn a lot of attention due to their potential in a range of applications, including tactile sensing, physiological monitoring, and flexible electronics. The commercialization of these sensors is still hampered by the difficulty of getting great sensitivity while keeping cheap production costs. The low-cost method for making capacitive sensors described in this study uses a sacrificial template made of a porous PDMS polymer and a dielectric layer based on MWCNT composites. When MWCNT is added to PDMS, the composite polymer's higher dielectric constant results in the sensor's high sensitivity of 4.9 kPa-1 below 1 kPa. Due to its extreme sensitivity, it can recognize minute changes in tactile pressure and pulse waveforms.
We propose a chipless RFID pH sensor which can be easily integrated into a bandage for wound monitoring. The sensor can detect the pH level from 4 to 7 of the wounded area through frequency shift owing to the pH sensitive dielectric parameter of chitosan hydrogel, embedded into the substrate of the sensor. The substrate is composed of fabric material which makes it a strong candidate for non-invasive wound monitoring application. The frequency shift can be wirelessly detected by RFID reader to get the status of the wounded area.
THz testing has been recently proposed to identify altered or damaged ICs. This method is based on the fact that a modern field-effect transistor (FET) with a sufficiently short channel can serve as a terahertz detector. The response can be recorded while changing the THz radiation parameters and location and compared to a trusted one for classification. We measured the THz response of original and damaged ICs for classification using different Transfer Learning models as a method of deep learning. We have achieved the highest classification accuracy of 98%.
Fast and accurate detection and monitoring of alcohol consumption have significant importance for safety and clinical applications. The excessive consumption of alcohol causes many health issues, such as colon, rectum, mouth, and throat cancers, liver cirrhosis, stroke, cardiovascular disease, and several psychiatric comorbidities. Alcohol addiction treatments also require close monitoring of the consumption. The correlation of alcohol concentration levels in sweat with the blood alcohol content (BAC) encourages developing a wearable sensing platform for alcohol detection noninvasively, continuously, and in real-time. Moreover, sweat is considered one of the most useful body fluids for biosensing applications since it contains several biomarkers with crucial medical information and is easy to collect. ZnO has exclusive chemical and physical characteristics to enhance chemical stability in physiological environments. Moreover, it has higher catalytic activity, biocompatibility, and a higher isoelectric point (IEP) of 9.5. Such a high IEP of ZnO nanoflakes (NFs) improves any biomolecules' immobilization. Hence, there is no necessity for an additional binding layer between the enzyme and the sensing electrode. A single-step sonochemical approach was developed to synthesize a thin layer of ZnONFs virtually on any substrate. This technique is fast, catalyst-free, less expensive, and ecologically benign, which enables a well-oriented growth on polyethylene terephthalate (PET) over an extensive range. In this study, an electrochemical biosensor was fabricated by immobilization of alcohol oxidase (AOX) on ZnO nanoflakes with a thickness of 20nm, synthesized on Au-coated PET. The results demonstrated a fast response within 5s. The sensor was tested in the range of 1 mg – 400 mg, which covers the entire physiological range, and the sensitivity of the sensor was determined by 3.47 nA/mg/dL/cm2.
We report on an Unmanned Aerial Vehicle (UAV) agricultural data acquisition system to substantially improve how farming is currently practiced. The demonstrated innovative platform simplifies data acquisition with high spatial and temporal resolution and high accuracy with affordable cost and hence accessible for wider communities. Our goal was to create a product capable of analyzing multiple crucial soil parameters via one unit and transfer the accumulated preprocessed data to an airborne mobile subsystem. The system consists of two modules working in harmony. The Soil Data Monitoring Probe (SDMP) is a stationary unit housing various soil probes, whereas the Airborne Data Acquisition System (ADAS) is a mobile unit that can be placed on a UAV. The SDMP captures soil metrics, preprocesses them and stores the data to an SD card, to be delivered using a NRF24 transceiver. The unit itself is battery and solar-powered, regulated power is fed through a custom-designed motherboard to the Arduino mega microcontroller (ATMEGA-2560), and internal/external modules. We estimated that, with its low-power design and the complementary solar power, it can work months without interruption. The ADAS is lightweight and was mounted on a drone. It initiates data collection by interrogating sleeping SDMP’s based on geolocation stamps by waking them up from deep sleep mode with an interrupt. The ADAS is supported by a custom motherboard to support a raspberry pi zero with Wi-Fi capabilities. We demonstrated the operational prototype system with 2-meter spatial resolution.
KEYWORDS: Multiplexing, Analog electronics, Safety, Receivers, Mobile devices, Glucose, Digital electronics, Dielectric spectroscopy, Data conversion, Data acquisition
A miniaturized potentiostat integrated with a three-electrode system to monitor different analytes is presented. The potentiostat circuit has been designed to have the feature of four-channel multiplexing to operate different electrochemical cells simultaneously. It is Bluetooth-connected to a user-controlled mobile app through which the system is wirelessly controlled and data is acquired. The personalized data from the analysis are displayed and analyzed in the mobile app. The system is comprised of four units: digital to analog converter (DAC), multiplexing unit, control unit, and current to voltage converter (CVC). The circuit is run by Arduino NANO 33 BLE. The Arduino's digital pulse width modulator (PWM) signal is converted into an analog signal through the DAC unit to run the scanning in the voltage range of -1V to 2V. This output of the DAC unit is then fed into the multiplexing unit to distribute it to all four control units one at a time. Later, each control unit of the respective cells performs scanning through the three-electrode system connected to the control unit. The real-time scanning data collected from the cell, sent to the CVC unit, and converted into a voltage to be readable by the Arduino. With its small form factor, low power, and low cost the presented system can be used wearable health monitoring platforms.
In this paper, an auxetic design is proposed for the flexible membrane of a piezoelectric pulse sensor and computationally analyzed for a high-sensitivity vibration sensing in micro electro-mechanical system (MEMS). Auxetics are metamaterial structures with negative Poisson’s ratio which enables sensor’s flexible diaphragm to be expanded in both longitudinal and transverse directions easily. The sensitivity of a pulse sensor with an auxetic membrane was studied and compared to an equivalent plain membrane when the substrate was under harmonic bending. The sensing response was determined for the both models using detailed Finite Element Model (FEM) simulations. The sensor with the auxetic membrane demonstrated excellent sensitivity output over a harmonic pressure input which shows its strong potential for high-sensitive MEMS sensing applications. A detailed fabrication process is also discussed.
Ambient energy harvesting is a promising route to achieve self-powered electronic devices. A nanogenerator scavenges mechanical energy from surrounding and converts it into electrical energy to supply power to a self-powered system. Using piezoelectric, thermoelectric, and triboelectric effects, several nanogenerators have been developed. Piezoelectric nanogenerators harvest kinetic energy to provide power for portable and small electronics. The kinetic energy generated from human body motions is an excellent energy source to power wearable devices. Biocompatibility, flexibility, high efficiency, and small volume are the main attributes for applications related to the human body. Piezoelectric nanogenerators based on thin films are desirable for their ability to scavenge irregular mechanical energies from bending. The power generation mechanism of a thin film based piezoelectric nanogenerator is determined by the coupled piezoelectric and semiconducting properties of the thin film.
ZnO is an appealing material for piezoelectric nanogenerators thanks to its coupling effect of semiconducting and piezoelectrical properties, extremely high elasticity, high power density, low-cost and controlled growth, and biocompatibility. Herein, a flexible piezoelectric nanogenerator with ZnO nanoflakes-polyethylene terephthalate (PET) is reported. The direct synthesis of ZnO nanoflakes on flexible PET substrate was achieved via a simple, fast, low-temperature, low-cost, highly stable, and reproducible sonochemical method. The synthesized ZnO thin films were characterized in detail. The results show that ZnO nanoflakes were grown with high purity and highly crystallinity along [0001] direction. Our piezoelectric device generated a peak voltage of 62 mV with great reproducibility (p-value of 0.0212). The fabrication of ZnO nanoflakes-PET piezoelectric nanogenerators helps us to develop more flexible and bio-compatible nanogenerators particularly self-powered wearable electronics.
Terahertz (THz) imaging technology applications require fast electronic devices with high responsivity, good selectivity, and large bandwidth. Field Effect Transistors operating in the THz or sub-THz range and using the rectification of plasma waves satisfy these requirements. InGaAs-based, GaN-based, and Si nanostructure arrays of plasmonic devices (referred to as TeraFETs) compete for plasmonic THz imaging applications. Depending on the channel size and the electron mobility, TeraFETs could operate in three different plasmonic regimes - collision-dominated, ballistic, and viscous with the highest modulation frequency reaching the sub-THz range of frequencies. Another advantage of TeraFETs as imaging elements is a wide dynamic range - from relatively low intensity signals up to the high intensity impinging THz beam causing the excitation of nonlinear plasma waves, such as shock waves or solitons propagating in the device channels. The TeraFETs could achieve resolution down to the nanometer scale. The plasmonic electronics technology might become a dominant THz electronics technology and support sensing, imaging, and communications at THz frequencies
Terahertz (THz) radiation with spectral range from 0.1 to 10 THz (wavelength equivalent of 3 mm–30 μm) is of great interest in high data rate communication, biomedical diagnostics, security screening, chemical identifications, sensing, and space research. Developing building blocks such as room temperature THz emitters and detectors with wide-range tunability, compactness, low power, and simple alignment, as well as modulator and switches is necessary for realizing those applications. Plasmonic structures and devices based on low dimensional systems such as 2DEG and graphene have been demonstrated to have vast potential to serve as such building blocks. Moreover, plasmonic metasurfaces and metamaterials can be used for active or passive switches and modulators in THz spectral range. We will present recent advancements, challenges and prospect of novel THz photonic and plasmonic devices for sensing, imaging and communication applications.
We report on highly sensitive and flexible biosensors for noninvasive lactate and alcohol monitoring in human perspiration based on zinc oxide (ZnO) nanostructures that does not require linker layer for surface functionalization due to the high isoelectric point of ZnO. Towards fabrication of the biosensors, two-dimensional (2D) ZnO nanoflakes (NFs) were synthesized on flexible polyethylene terephthalate (PET) substrates employing single step sonochemical method after which lactate oxidase (LOx) and anti-body for ethyl glucuronide (EtG)-a metabolite of ethanol were immobilized atop without a linker layer. The cyclic voltammetry (CV) measurements in the concentration range of 10pM-10μM for lactate and 4.5 μM-0.45 M for EtG yielded minimum limit of detection of 10 pM and 4.5 μM, respectively for the electrode area of 0.5 × 0.5 cm2. Moreover, lactate sensor with ZnO NF electrodes demonstrated four times higher sensitivity compared to the ones with gold electrode that required DTSP linker layer for surface functionalization. High isoelectric point allows a direct, stable pathway for rapid electron transport without any mediator when an analyte is immobilized on NFs and improves electron transfer rate.
Plasmonic ultraviolet (UV) photodetectors have witnessed ongoing and tremendous enhancements in quantum efficiency and responsivity. Here, we go beyond regular plasmonic detectors by using periodic arrays of fractal aluminum nanostructures as Cayley trees deposited on a Ga2O3 substrate to generate photocurrent. We show that the proposed aluminum Cayley trees are able to support and intensify strong broad plasmon resonant modes across the UV to the visible spectrum. It is shown that the Cayley trees can be tailored to facilitate strong absorption at high energies (short wavelengths), resulting formation of hot carriers. Having perfect compatibility to operate at the UV spectrum, fractal aluminum structures and Ga2O3 substrate help to increase the produced photocurrent remarkably. Presence of Ga2O3 layer blue-shifts the peak of absorption to higher energies and helps to generate hot carriers at deeper UV wavelengths.
In this paper, we have experimentally demonstrated the engineering of semi-metal single layer CVD Graphene’s bandgap by decorating with randomly distributed ZnO nano-seed grown by sonication of Zinc acetate dehydrate. The proximity of nanoparticles and Graphene breaks Graphene’s sublattice symmetry and opens-up a bandgap. The 2-D/G ratio of Raman spectroscopy of decorated Graphene along with a peak at 432.39 cm-1 confirmed presence of ZnO on single layer Graphene. The introduced bandgap was measured from the slope of Arrhenius plot. Graphene with significant bandgap introduced by the proposed methods could be used for devices intended for digital and logic applications.
We introduce a platform based on plasmonic metamaterials to design various optical devices. A simple structure brokenring
with a nanodisk at the center is utilized to excite and hybridize the plasmon resonant modes. We show that the
proposed nanoantenna is able to support strong sub- and superradiant plasmon resonances because of its unique
geometrical features. Using the concentric ring/disk in a dimer orientation as a nanoantenna on a multilayer metasurface
consisting of graphene monolayer, we induced double sharp plasmonic Fano resonant modes in the transmission window
across the visible to the near-infrared region. Considering the strong polarization-dependency of the broken-ring/disk
dimer antenna, it is shown that the proposed plasmonic metamaterial can be tailored as an optical router device for fast
switching applications. This understanding opens new paths to employ plasmonic metamaterials with simple geometrical
nanoscale blocks for sensing and switching applications.
In this work, we propose a novel Graphene field effect transistor (GFET) with ohmic Source/Drain contacts having capacitive extension towards the Gate. The ohmic contacts of the proposed GFET are used for DC biasing as like as conventional GFETs whereas their extended parts which are capacitively coupled to the channel reduce access region length as well as the access resistance and provide a low impedance route for the high frequency RF signal. Reduction of access resistance along with the paralleling of ohmic contact resistance and real part of capacitive impedance result in an overall lower Source/Drain resistance which eventually increases the current gain cut-off frequency, fT. We have studied and compared the DC and RF characteristics of the baseline conventional GFET and proposed GFET using analytical and numerical techniques.
We propose and extensively analyze a novel Graphene-FET (GFET) with two capacitively coupled field-controlling electrodes (FCE) at the ungated access regions between gate and source/drain. The FCEs are proposed to be positioned both on top and bottom of the device. The FCEs could be independently biased to modulate sheet carrier concentration and thereby the resistance in the ungated regions. The reduction of source/drain access resistance results in increased cut off frequency compared to those of conventional GFETs with the same geometry. The DC and improved RF characteristics of the proposed device have been studied using both analytical and numerical techniques and compared with the baseline designs.
In this paper, we report on fabrication of a label free, highly sensitive and selective electrochemical cortisol
immunosensors using one dimensional (1D) ZnO nanorods (ZnO-NRs) and two dimensional nanoflakes (ZnO-NFs)
as immobilizing matrix. The synthesized ZnO nanostructures (NSs) were characterized using scanning electron
microscopy (SEM), selective area diffraction (SAED) and photoluminescence spectra (PL) which showed that both
ZnO-NRs and ZnO-NFs are single crystalline and oriented in [0001] direction. Anti-cortisol antibody (Anti-Cab) are
used as primary capture antibodies to detect cortisol using electrochemical impedance spectroscopy (EIS). The
charge transfer resistance increases linearly with increase in cortisol concentration and exhibits a sensitivity of 3.078
KΩ. M-1 for ZnO-NRs and 540 Ω. M -1 for ZnO-NFs. The developed ZnO-NSs based immunosensor is capable of
detecting cortisol at 1 pM. The observed sensing parameters are in physiological range. The developed sensors can
be integrated with microfluidic system and miniaturized potentiostat to detect cortisol at point-of-care.
Analytical and numerical studies of the dispersion properties of grating gated THz plasmonic structures show that
the plasmonic crystal dispersion relation can be represented in terms of effective index of the dielectric medium
around the 2DEG for the plasmons. Forbidden energy band gaps are observed at Brillion zone boundaries of the
plasmonic crystal. FDTD calculations predict the existence of the plasmonic modes with symmetrical, antisymmetrical
and asymmetrical charge distributions. Breaking the translational symmetry of the crystal lattice by
changing the electron concentration of the two dimensional electron gas (2DEG) under a single gate line in every 9th gate induces a cavity state. The induced cavity state supports a weekly-coupled cavity mode.
We theoretically investigated and designed a tunable, compact THz source in 1-10 THz range based on a nonlinear
optical microdisk resonator. The lack of tunable THz source operating at room temperature is still one of the major
impediments for the applications of THz radiation. The proposed device on an insulated borosilicate glass substrate
consists of a nonlinear optical disk resonator on top of another disk capable of sustaining THz modes. A pair of Si
optical waveguides is coupled to the nonlinear microdisk in order to carry the two input optical waves. Another pair of Si
THz waveguides is placed beneath the input optical waveguides to couple out the generated THz radiation from the disk
to receiver antenna. Both optical and THz disks are engineered optimally with necessary effective mode indices in order
to satisfy the phase matching condition. We present the simulation results of our proposed device using a commercial
finite element simulation tool. A distinguished THz peak coincident exactly with the theoretical calculations involving
DFG is observed in frequency spectrum of electric field in the microdisk resonator. Our device has the potential to
enable tunable, compact THz emitters and on-chip integrated spectrometers.
We designed and theoretically investigated nonlinear optical micro-ring resonators for tunable terahertz (THz) emission
in 1-10 THz range by using difference frequency generation (DFG) phenomenon with large second order optical
nonlinearity (χ(2)). Our design consists of a nonlinear ring resonator and another ring underneath capable of sustaining high-Q resonant modes for infrared pump beams and the generated THz radiation, respectively. The nonlinear ring
resonator generates THz through DFG by mixing the input waves carried by a pair of waveguides. The proposed device
can be a viable platform for tunable, compact THz emitters and on-chip integrated spectrometers.
We report on sub-wavelength THz plasmonic split ring resonators on 2 dimensional electron gas (2DEG) at AlGaN/GaN
hetero-interface and on oxide coated high mobility graphene. The investigated in this study guide THz electric field into
deep sub-wavelength scale by plasmonic excitations. Propagation of a broadband pulse of EM waves was simulated by
using a commercial FDTD simulation tool. The results show that split ring resonator structures can be used to guide THz
into deep sub-wavelength down λ/200 and achieve relatively higher quality factors than grating gate devices by
plasmonic confinement which can be used for THz detection, filtering and possibly for THz on-chip-spectrometer.
Moreover, ring resonator modes supported by system can be tuned with an applied voltage to gratings.
We report on sub-wavelength THz plasmonic lenses based on 2 dimensional electron gas (2DEG) at AlGaN/GaN
interface and also on few-layer graphene sheets. Circular gratings investigated in this study concentrate THz electric
field into deep sub-wavelength scale by plasmonic excitations polarization independently. Propagation of a broadband
pulse of EM waves in 0.5-10 THz was simulated by using a commercial FDTD simulation tool. The results show that
concentric plasmonic grating structures can be used to concentrate THz into deep sub-wavelength down to λ/350 spot
size and achieve very large field enhancements by plasmonic confinement which can be used for THz detection and
possibly for sub-wavelength imaging. Electric field intensity under the central point can be orders of magnitude higher
than the outer grating area. Moreover, plasmonic lens modes supported by system can be tuned with an applied voltage
to gratings.
We propose Terahertz (THz) plasmonic devices based on linearly integrated FETs (LFETs) on Graphene. LFET
structures are advantageous for (THz) detection since the coupling between the THz radiation and the plasma wave is
strongly enhanced over the single gate devices and accordingly higher-order plasma resonances become possible.
AlGaN/GaN heterostructure LFETs with their high sheet carrier concentration and high electron mobility are promising
for plasmonic THz detection. Nevertheless, our numerical studies show that room temperature resonant absorption of
THz radiation by the plasmons in AlGaN/GaN LFETs is very weak even if the integration density is sufficiently large.
Our simulations also demonstrate that similar LFETs on Graphene, which has very large electron mobility, can
resonantly absorb THz radiation up to 5th harmonic at room temperature. Additionally, we investigated LFETs with
integrated cavities on Graphene. Such Periodic Cavity LFETs substantially enhance the quality factor of the resonant
modes.
In this paper, we report on a new method of synthesis for ZnO nanowires on arbitrary substrates and nanowalls on
aluminum coated substrates at ambient conditions. Our method is based on sonochemical reaction of Zinc acetate
dihydrate (Zn(O2CCH3)2-2H2O) Zinc nitrate hexahydrate (Zn(NO3)2-6H2O) and hexamethylenetetramine (HMT,
(CH2).6N4) in aqueous solutions. Repetitive growth cycles resulted in synthesis of ZnO nanowires and nanowalls with
controlled dimensions and large aspect ratios. Extensive analysis by transmission electron microscopy (TEM), energy
dispersive x-ray spectroscopy (EDS) and UV-Visible spectroscopy revealed the crystalline ZnO composition of the
synthesized nanostructures. The proposed method is a rapid, inexpensive, low-temperature, catalyst-free, CMOS
compatible and environmentally benign alternative to existing growth techniques.
New energy harvesting technologies have drawn interest in recent years for both military
and commercial applications. We present complete analysis of a novel device technology
based on nanowire antennas and very high speed rectifiers (collectively called
nanorectenna) to convert infrared and THz electromagnetic radiation into DC power. A
nanowire antenna can receive electromagnetic waves and an integrated rectifier can
convert them into electrical energy. The induced voltage and current distributions of
nanowire antennas for different geometric parameters at various frequencies are
investigated and analyzed. Also, nanowire antenna arrays with different geometries and
distributions are examined. Moreover, novel nanoantennas are proposed for broadband
operation and power conversion. All numerical computations are conducted using Ansoft
HFSS. An incident plane wave was used to excite each device and simulations were carried out
for frequencies between 0 and 200 THz. A voltage is induced in each device and it is
measured in the thin oxide layer. Finally, optimum geometries of nanowires are proposed
in order to maximize the amount of infrared power that is harvested.
Gate-voltage tunable plasmon resonances in the two dimensional electron gas of high electron mobility transistors
(HEMT) fabricated from the InGaAs/InP and AlGaN/GaN materials systems are reported. Gates were in the form of a
grating to couple normally incident THz radiation into 2D plasmons. Narrow-band resonant absorption of THz radiation
was observed in transmission for both systems in the frequency range 10 - 100 cm-1. The fundamental and harmonic
resonances shift toward lower frequencies with negative gate bias. Calculated spectra based on the theory developed for
MOSFETs by Schaich, Zheng, and McDonald (1990) agree well with the GaN results, but significant differences for the
InGaAs/InP device suggest that modification of the theory may be required for HEMTs in some circumstances.
Pronounced resonant absorption and frequency dispersion associated with an excitation of collective 2D plasmons have
been observed in terahertz (0.5-4THz) transmission spectra of grating-gate 2D electron gas AlGaN/GaN HEMT (high
electron mobility transistor) structures at cryogenic temperatures. The resonance frequencies correspond to plasmons
with wavevectors equal to the reciprocal-lattice vectors of the metal grating, which serves both as a gate electrode for the
HEMT and a coupler between plasmons and incident terahertz radiation. The resonances are tunable by changing the
applied gate voltage, which controls 2D electron gas concentration in the channel. The effect can be used for resonant
detection of terahertz radiation and for "on-chip" terahertz spectroscopy.
Light emitting diodes (LEDs) are excellent candidates for the applications requiring low noise light sources with wavelengths ranging from 200 nm to 900 nm. These applications include the detection of fluorescence from protein molecules excited with the ultraviolet (UV) light (200-300nm) for identifying miniscule amounts of hazardous biological pathogens. The detection system including the light source must exhibit low noise and high stability over tens of minutes. In comparison with xenon, tungsten halogen lamps, lasers, and other conventional UV sources, UV LEDs are more stable, have lower noise, are smaller, cheaper, and easier to use. We report on the low frequency fluctuations of the current and light intensity of LEDs (fabricated by SET, Inc.) with wavelengths ranging from 265nm to 340nm. The results are compared with the noise properties of the halogen lamps and other commercially available LEDs with the wavelengths of 375nm, 505nm and 740nm. We show that the LEDs fabricated by Sensor Electronic technology, Inc. are suitable for studying steady state and time-varying UV fluorescence of biological materials. The correlation coefficient between the current and light intensity fluctuations varies with the LED current and load resistance. This dependence is explained in terms of the contributions to the 1/f noise from the active region and from the LED series resistance. The noise level could be reduced by operating the LEDs at a certain optimum current level and by using a large external series resistance (in the current source driving mode).
Generation-recombination (GR) noise in GaN and AlGaN thin films, GaN based Metal Semiconductor Field Effect Transistors (MESFETs), Heterostructure Field Effect Transistors (HFETs) and Schottky diode photodetectors was investigated. AlGaN thin films, AlGaN/GaN HFETs and Schottky barrier Al0.4Ga0.6N diodes exhibited GR noise with activation energies of 0.8 - 1 eV. AlGaN/GaN HFETs also presented GR noise with activation energies of 1 - 3 meV and 0.24 eV at cryogenic temperatures. No such noise was observed in thin doped GaN films and GaN MESFETs. GR noise with the largest reported activation energy of 1.6 eV was measured in AlGaN/InGaN/GaN Double Heterostructure Field Effect Transistors (DHFETs). We conclude that the local levels responsible for the observed noise in HFETs and DHFETs could be located in AlGaN barrier layers.
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