Interest in Be as a shallow acceptor in III-Nitrides is growing. Recently, we reported the first systematic study of MOCVD growth of GaN:Be. It is well known that impurities tend to segregate at threading dislocations in GaN. Despite the relatively high quality of MOCVD-grown GaN, lattice mismatch with foreign substrates such as sapphire usually results in dislocation density on the order of 108 cm-2. In this study, we investigate the impact of substrate quality on the GaN:Be. The effects of the substrate lattice mismatch and dislocation density on total Be incorporation, optical characteristics, and Be activation efficiency are discussed.
P-type doping in III-Nitrides has long presented a challenge in the development of wide bandgap optoelectronic devices. To date, magnesium is the only commercially viable acceptor in III-Nitrides. Beryllium has been considered a potential alternative to magnesium, and initial theoretical calculations as well as photoluminescence studies suggested that it is shallower than magnesium in GaN. However, to date, there have been no reliable or repeatable examples of p-type GaN:Be in literature. Here, we present a systematic study of MOCVD-grown GaN:Be with varied doping conditions. All samples show prominent UV and yellow luminescence, characteristic of beryllium acceptor in GaN.
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