Laser diodes operating in the 2.3-μm band are attractive for detecting trace carbon oxide (CO) gas because of the strong absorption lines of CO and weak interference from H2O in this band. As a light source for CO-gas detection, we previously developed a 2.3-μm-band distributed feedback (DFB) laser with InAs/InGaAs multiple quantum wells (MQWs) grown on InP. To construct a high-speed with high-accuracy measurement system for CO, the light source must be capable of fast wavelength tuning over a wide range. In this study, we developed InAs/InGaAs distributed Bragg reflector (DBR) laser operating in the 2.3-μm band that uses current injection and has wider and faster wavelength tuning compared with DFB lasers using chip-temperature control. The laser cavity consists of an active region with InAs/InGaAs MQWs, front/rear DBR regions, and phase-control region. The DBR and phase-control regions are monolithically integrated with the active region by using the butt-joint technique. The measured lasing wavelength was 2348.1 nm with an injection current for the active region of 100 mA at room temperature and under continuous wave operation. When the DBR current (front + rear) increased from 0 to 100 mA, the lasing wavelength shifted by -12.0 nm. The estimated refractive index change was 0.51%, which is comparable to that of conventional devices operating in the telecommunication band. Furthermore, by sweeping the currents for the DBRs and phase-control region, the lasing wavelength could be continuously tuned over a range of 4.2 nm, which covers multiple CO absorption lines in the 2.3-μm band.
Stabilization of a Fourier domain mode-locked (FDML) laser was achieved in a wide temperature range of over 30 degrees by adaptively tuning the sweep rate without using any complicated or massive temperature control equipment. The proposed FDML laser in a fiber ring cavity configuration consists of an optical tunable filter based on a KTN (KTa1-xNbxO3) scanner. The FDML laser operates at the sweep rate of around 200 kHz. The output properties show an output power of 2 mW and coherence lengths of 8.5 mm for the sweep range of 100 nm and 11 mm for that of 80 nm at the center wavelength of 1300 nm.
We report on the use of a Semiconductor Disk Laser (SDL) as a seed laser for an Ytterbium-Doped Photonic Bandgap Fiber (Yb-PBGF) amplifier in a Master-Oscillator Power-Amplifier (MOPA) configuration. The SDL comprised a GaInAs/GaAs/GaAsP gain chip, a 1-mm-thick etalon for mode selection, and a 3-mm-thick birefringent filter for wavelength tuning. The fiber amplifier consisted of an Yb-doped core surrounded by a structure of periodically arranged germanium rods with a pitch of 10.2 μm, and to maintain the polarization, the fiber comprised two boron rods. The output of the MOPA-configuration was 31 W and the linewidth of the amplifier output was 149±31 kHz.
1178 nm single-frequency amplification by Yb-doped photonic bandgap fiber has been demonstrated. 24.6 W
output was obtained without stimulated Brillouin scattering. 1.8 dB suppression of Brillouin gain by an acoustic
antiguiding effect has been found in the low-index core antiresonant reflecting optical waveguide.
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