Photolithography plays a major role in leading-edge semiconductor fabrication. Due to the tighter photolithography specification, leading-edge 1γ (1-gamma) DRAM needs the EUV technology. There is a stringent defectivity requirement to meet critical specifications for photolithography. Any failure mode left undetected leads to yield loss and prevents cycles of learning during the early technology development phase and pilot line manufacturing. Due to tighter pitches and a high aspect ratio etch process, EUV lithography levels are prone to defects such as bridging and toppling. Photolithography Track Equipment leads the way in reducing defectivity using advanced processes and hardware optimization. Traditional bare silicon-based PMON (particle monitor) for critical tools and process monitoring is insufficient for leading-edge photolithography. It is unreliable for monitoring chemical interaction-based defectivity. Enabling Photo track monitoring (PTM) shortened cycles of learning and aided in optimizing the photolithography processes for development and production.
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