Dr. Kinga Kondracka Profile

Dr. Kinga Kondracka

at Warsaw University of Technology

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Proceedings Article | 14 October 2020 Paper

Ti and TiAl-based ohmic contacts to 4H-SiC

Agnieszka Martychowiec, Norbert Kwietniewski, Kinga Kondracka, Aleksander Werbowy, Mariusz Sochacki

Proceedings Volume 11581, 115810W (2020) https://doi.org/10.1117/12.2580518

KEYWORDS: Silicon carbide, Resistance, Annealing, Argon, Titanium, Metals, Interfaces, Aluminum

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This paper describes successfully formed ohmic contacts to 4H-SiC with a view to their use in the technology of bipolar devices. The individual activities included in this investigation were divided into two main parts concerning n-type and p-type silicon carbide processing and different issues have been discussed in relation to that division. In the first part of the experiment titanium-based ohmic contacts to n-type 4H-SiC have been fabricated. The influence of annealing temperature within the range of 850-1100°C and the composition of working gases in RTP reactor on I-V characteristics and contact resistance have been examined. Furthermore, the effect of surface preparation by thermal oxidation of SiC substrate and removal of the oxide immediately prior to contact metallization deposition was investigated. The results obtained for the Si-face (0001) and C-face (000-1) of n-type 4H-SiC were compared. Further research concerns ohmic contacts formation to p-type 4H-SiC based on titanium-aluminum alloys. Four metallization compositions differing in the aluminum layer thickness (25, 50, 75, 100 nm) at a constant thickness of the titanium layer (50 nm) were examined. The structures were annealed within temperature range of 800°C - 1100°C and then electrically characterized. The best electrical parameters and linear, ohmic character of contacts were obtained for structures with Al layer thickness equal or greater then Ti layer thickness and annealing at temperature of 1000°C or higher. Circular Transmission Line Measurement (c-TLM) technique was adopted in both described cases to define a variation in contact resistance (R_c), transfer length (L_T), specific contact resistance (ρ_c) and sheet resistance (R_sh) between metal contacts and silicon carbide.

Proceedings Article | 6 November 2019 Paper

Technology and characterization of ISFET structures with graphene membrane

Kinga Kondracka, Piotr Firek, Piotr Caban, Aleksandra Przewłoka, Jan Szmidt

Proceedings Volume 11176, 111764X (2019) https://doi.org/10.1117/12.2536746

KEYWORDS: Graphene, Transistors, Field effect transistors, Sensors, Germanium, Oxides, Optical lithography, Silicon, Phosphorus, Copper

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Graphene due to its properties, such as high sensitivity and biocompatibility finds application in instruments that are used to cooperation with organic substances. At the same time, from the point of view of sensory devices, it is a material with high absorption potential that is able to improve sensitivity and selectivity of these devices. Another benefit of graphene application may be to use its properties in connection with ISFET – Ion Sensitive Field Effect Transistor, which operation principle is based mostly on detection of changes in hydrogen ions concentration. ISFET transistors ale produced in MOS technology, the difference between them and classic MOSFET (Metal-OxideSemiconductor Field Effect Transistor) structures is gate area, where gate metallization was replaced with reference electrode submerged in solution applied in this area. Properties of the solution determine transistor’s action. It is possible to make modifications in gate area of the structure which effects in changes of transistor’s properties. Example of such a modification may be application of graphene layer, which properties may significantly improve detecting capabilities of ISFET devices. For the needs of the research described in this work, graphene was deposited in gate area of transistors through transfer from cooper and germanium surfaces. To check correctness of ISFETs with graphene layer work, current – voltage characteristics of them were determined. Standard I-V characteristics with SiO₂ as gate dielectric were compared with these where gate area was enriched with a graphene layer. Structures with graphene mostly worked properly. Thanks to the results presented in this work, it is possible to carry out further experiments using this structures and organic substances.

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