Various technologies such as multiple patterning (MP) are being developed to extend the current DUV optical
lithography to deal with the delay of next generation lithography such as EUV and NIL. Likewise, it is necessary to
continue to develop technologies for mask inspection tools for masks fabricated for the DUV optical lithography so that
they can be appropriately inspected, until the next generation EB or EUV actinic inspection tools is put into practical use.
To fabricate 1x nm devices with the present lithography process, the industry will likely further extend double
patterning (DP) to multiple patterning (MP). For MP, the requirements for the inspection sensitivity of traditional defects
such as intrusions or extrusions do not change much, but those for CD control and overlay tolerances will become more
critical.
In this paper, we will discuss the main features of NPI-7000, a DUV based mask inspection tool for the 1x nm node
devices, and our challenges in enhancing the CD error sensitivities to enable the inspection of masks.
EUV lithography is expected to be not only for hp 2Xnm node device production method but also for hp 1X nm
node. We have already developed the mask inspection system using 199nm wavelength with simultaneous transmitted
and reflected illumination optics, which utilize p-polarized and s-polarized illumination for high defect detection
sensitivity, and we developed a new image contrast enhancement method which changes the digitizing rate of imaging
sensor depending on the signal level. Also, we evaluate the mask structure which improve the image contrast and defect
detection sensitivity. EUVL-mask has different configuration from transmitted type optical-mask. A captured image
simulator has been developed to study the polarized illumination performance theoretically of our inspection system.
Preferable mask structure for defect detection and possibility of miss defect detection are considered.
As the feature sizes of LSI become smaller, the increase in mask manufacturing time (TAT) and cost is becoming critical
and posing challenges to the mask industry and device manufacturers. In May 2006, ASET Mask D2I launched a 4-year
program for the reduction in mask manufacturing TAT and cost, and the program was completed in March 2010. The
focus of the program was on the design and implementation of a synergetic strategy involving concurrent optimization of
MDP, mask writing, and mask inspection. The strategy was based upon four key elements: a) common data format, b)
pattern prioritization based on design intent, c) an improved approach in the use of repeating patterns, and d) parallel
processing. In the program, various software and hardware tools were developed to realize the concurrent optimization.
After evaluating the effectiveness of each item, we estimated the reduction in mask manufacturing TAT and cost by the
application of results obtained from the Mask D2I programs. We found that mask manufacturing TAT and cost can be
reduced to 50% (or less) and to about 60% respectively.
We report on the development of a new mask inspection technology that makes total inspection faster and less costly.
The new technology adopts a method of selecting a defect detection sensitivity level for every local area, defined by
factors such as defect judgment algorithm and defect judgment threshold. This approach results in a reduction of pseudodefect
count leading to shorter inspection and review time. Selected defect detection sensitivity levels for every local
area are extracted from a database of Mask Data Rank (MDR) that is based on the design intent from the design stage,
and/or on a pre-analysis of inspection pattern data. The proposed system also executes a printability verification
function, not only for the mask defect regions but also for specific portions where high Mask Error Enhancement Factor
(MEEF) is determined. It is necessary to ascertain suppression of pseudo-defect detection for extremely complicated
masks such as masks with Source-Mask Optimization (SMO). This work reports on the new mask inspection system.
With continued shrinkage of the semiconductor technology node, the inspection of mask with a single preset defect
detection sensitivity level becomes impractical because of the increase occurrence of false capturing of defects.
Inspection of leading-edge masks with conventional defect detection method, redundant detection of defects such as
pseudo defects, or anomalies such as slightly deformed OPCs caused by assist features tend to increase the Turn Around
Time (TAT) and cost of ownership (COO).
This report describes a new method for the inspection of mask. It assigns defect detection sensitivity levels to local area
inspections and is named as Regional Sensitivity Applied Inspection (RSAI). Then, the sensitivity information from each
local area is converted into a format that can be fed into a Mask Data Rank (MDR) which is represented on the basis of
pattern prioritization determined at the device design stage. Core technologies employing this concept resulted in the
shortening of TAT where samples of actual device mask patterns were used.
Printability verification functions (PVF) were applied to the advancement of technologies such as to Source Mask
Optimization (SMO) technology. We report on the shortening of TAT that was achieved by the implementation of a new
inspection technology that combines RSAI with MDR, and employs printability verification functions.
Lithography potential expands for 45nm node to 32nm device production by the development of immersion
technology and the introduction of phase shift mask. We have already developed the mask inspection system using
199nm wavelength with simultaneous transmitted illumination and reflected illumination optics, and is an effectual
candidate for hp 32nm node mask inspection. Also, it has high defect sensitivity because of its high optical resolution, so
as to be utilized for leading edge mask to next generation lithography. EUV lithography with 13.5nm exposure
wavelength is dominant candidate for the next generation lithography because of its excellent resolution for 2x half pitch
(hp) node device. But, applying 199nm optics to complicated lithography exposure tool option for hp2x nm node and
beyond, further development such as image contrast enhancement will be needed. EUVL-mask has different
configuration from transmitted type optical-mask. It is utilized for reflected illumination type exposure tool. Its
membrane structure has reverse contrast compared with optical-mask. This nature leads image profile difference from
optical-mask. A feasibility study was conducted for EUV mask pattern defect inspection using DUV illumination optics
with two TDI (Time Delay Integration) sensors. To optimize the inspection system configuration, newly developed Nonlinear
Image Contrast Enhancement method (NICE) is presented. This function capability greatly enhances inspectability
of EUVL mask.
A novel EUV mask inspection tool with 199nm laser source and super-resolution technique has been developed.
This tool is based on NPI-5000PLUS, which is a photo-mask inspection tool for hp2X nm node and beyond. In order to
implement EUV mask inspection with only a short time for mask set-up, reflected illumination type alignment optics to
guide alignment mark and adjust mask coordinate with visible illumination light are equipped. Moreover, to inspect EUV
masks for hp2X nm and beyond, the image detection optics with the novel polarized illumination technique is
incorporated in this tool. Image contrast enhancement was confirmed by experiments and simulations.
In addition to the conventional demands for high sensitivities with which the mask inspection system detects the minute
size defects, capability to extract true defects from a wide variety of patterns that should not be counted as pseudo
defects has been quite demanding. It is necessary to ascertain suppression of MEEF incurred by the combination of
parameters such as LER and defects of SRAF.
NFT and Brion are jointly developing a mask-image based printability verification system with functions combining
their respective technologies with the results from ASET's research. This report describes such defect detection results
and introduces the development of a mask inspection system with printability verification function.
In this paper, we will report on our experimental and simulation results on the impact of EUVL mask absorber
structure and of inspection system optics on mask defect detection sensitivity. We employed a commercial simulator
EM-Suite (Panoramic Technology, Inc.) which calculated rigorously using FDTD (Finite-difference time-domain)
method. By using various optical constants of absorber stacks, we calculated image contrasts and defect image signals as
obtained from the mask defect inspection system. We evaluated the image contrast and the capability of detecting
defects on the EUVL masks by using a new inspection tool made by NuFlare Technology, Inc. (NFT) and Advanced
Mask Inspection Technology, Inc. (AMiT). This tool is based on NPI-5000 which is the leading-edge photomask defect
inspection system using 199nm wavelength inspection optics. The programmed defect masks with LR-TaBN and LRTaSi
absorbers were used which had various sized opaque and clear extension defects on hp-160nm, hp-225nm, and hp-
325nm line and space patterns. According to the analysis, reflectivity of EUVL mask absorber structures and the
inspection optics have large influence on image contrast and defect sensitivity. It is very important to optimize absorber
structure and inspection optics for the development of EUVL mask inspection technology, and for the improvement of
performance of EUV lithographic systems.
The lithography potential of an ArF (193nm) laser exposure tool with high numerical aperture (NA) will expand its
lithography potential to 45nm node production and even beyond. Consequently, a mask inspection system with a
wavelength nearly equal to 193nm is required so as to detect defects of the masks using resolution enhancement
technology (RET). A novel high-resolution mask inspection platform using DUV wavelength has been developed, which
works at 199nm. The wavelength is close to the wavelength of ArF exposure tool. In order to adapt 199nm optics for
hp2x nm node and beyond defect detection on next generation mask with appropriate condition, further development
such as the illumination condition modification technique has been studied. The illumination optics has the advantageous
feature that super-resolution method is applied by adding the optics. To evaluate the super-resolution effect of
illumination condition control optics, the interaction of light with mask features is calculated rigorously using RCWA
(Rigorous Coupled-Wave Analysis) method.
In this paper, image contrast enhancement effect using newly designed super-resolution optics which is applied to
transmitted and reflected light image acquisition system are presented with simulation and experiment.
The lithography potential of an ArF (193nm) laser exposure tool with high numerical aperture (NA) will expand
its lithography potential to 65nm node production and even beyond. Consequently, a mask inspection system with a light
source, whose wavelength is nearly equal to 193nm, is required so as to detect defects of the masks using resolution
enhancement technology (RET). Wavelength consistency between exposure tool and mask inspection tool is strongly
required in the field of mask fabrication to obtain high defect inspection sensitivity. Therefore, a novel high-resolution
mask inspection platform using DUV wavelength has been developed, which works at 198.5nm. This system has
transmission and reflection inspection mode, and throughput using 70nm pixel size were designed within 2 hours per
mask. In this paper, transmitted and reflected light image acquisition system and high accuracy focus detection optics are
presented.
We have developed a mask inspection system using 199nm inspection light wavelength. This system performs
transmission and reflection inspection processes concurrently within two hours per plate. By the evaluation result of
mask images and inspection sensitivity, it is confirmed that the 199nm inspection system has the advantage over the
system using 257nm and has the possibility corresponding to next generation mask inspection. Furthermore, advanced
die-to-database (D-DB) inspection, which can generate high-fidelity of a reference image based on the CAD data for
alternating phase shift mask (PSM) or tri-tone, is required for next generation inspection system, too. Therefore, a
reference image generation method using two-layer CAD data has been developed. In this paper, the effectiveness of
this method is described.
The usage of ArF immersion lithography for hp 65nm node and beyond leads to the increase of mask error enhancement factor in the exposure process. Wavelength of inspection tool is required to consistent with wavelength of lithography tool. Wavelength consistency becomes more important by the introduction of phase shift mask such as Tri-tone mask and alternating phase shift mask. Therefore, mask inspection system, whose inspection light wavelength is 199nm, has been developed. This system has transmission and reflection inspection mode, and throughput, using 70 nm pixel size, were designed within 2hours per mask. The experimental results show expected advantages for Die-to-Die and Die-to-Database inspection compared with the system using 257nm inspection optics. Shorter wavelength effect makes transmission inspection sensitivity increase, and realizes 40nm size particle inspection. As for the phase shift mask, the difference of gray value between the area with phase defect and without phase defect was clear relatively. In this paper, specifications and design, experimental results are described.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.