In this study, we proposed a new crucible-free crystal growth method, oxide crystal growth from cold crucible (OCCC) method, and attempted to grow oxide single crystals such β-Ga2O3, Gd3Ga3Al2O12 and Y2O3 under a high oxygen partial pressure atmosphere. In the OCCC method, as in the cold crucible method, high frequency is applied directly to the oxide melts. The convection of the melt can be controlled by optimizing the frequency value according to the electric resistivity of the melts, and stable crystal growth through the process from seeding to crystal diameter expansion is a major feature of this method.
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