Photorefractive semiconductors are attractive for information processing, because of fast material response, compatibility with semiconductor lasers, and availability of cross polarization diffraction for enhancing signal-to-noise ratio. This paper presents recent experimental results on information processing using photorefractive GaAs, InP and CdTe, including image processing with semiconductor lasers. The results demonstrate the feasibility of using photorefractive compound semiconductors as dynamic holographic interaction media for information-processing applications in low-power, compact configurations.
A potential application of the photorefractive time-integrating correlator is the real-time radar jamming interference rejection system, using the adaptive filter method; a fast photorefractive crystal is needed for adapting a rapidly changing jamming signal. An effort is presently made to demonstrate and characterize a GaAs-based photorefractive time-integrating correlator, since GaAs crystals are 2-3 orders of magnitude faster than most other alternatives.
The unique features of photorefractive compound semiconductors are presented. The advantages of this class of nonlinear optical materials for optical processing are illustrated with examples using GaAs and InP. The difference between GaAs and InP in the laser power density requirement is discussed.
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