Mr. Il-Ho Lee Profile

Il-Ho Lee

Senior Manager at Dongbu HiTek Co Ltd

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Author

Publications (10)

Proceedings Article | 10 May 2005 Paper

Investigation on the effect of metallic impurity Zn in solvent during photolithography process

Byoung-Tak Jeon, Ook-Hyun Kim, Jeong-Heon Baik, Jeong-Hyuk Ha, Il-Ho Lee, Weon-Sik Yang

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.598349

KEYWORDS: Zinc, Photoresist materials, Semiconducting wafers, Head-mounted displays, Lithography, Coating, Transition metals, Optical lithography, Spectroscopy, Deep ultraviolet

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Proceedings Article | 24 May 2004 Paper

Belly button reduction using optimized resist filtration method in CMOS gate pattern process

Jeong-Heon Baik, Dong-Jin Lee, Sung-Ho Lee, Sun-Hyung Park, Il-Ho Lee, Jae-Sung Choi

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.533895

KEYWORDS: Etching, Semiconducting wafers, Coating, Photoresist processing, Transistors, Particles, Inspection, Failure analysis, Critical dimension metrology, Reflectivity

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Proceedings Article | 12 June 2003 Paper

Resist cracking and adhesion improvement

Il-Ho Lee, Jin-Seo Lee, Kwan-Yul Lee, Chun-Geun Park, Jae-Sung Choi, Jeong Lee

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.487726

KEYWORDS: Oxides, Semiconducting wafers, Photoresist processing, Head-mounted displays, Silicon, Lithography, Fluorine, Chemical mechanical planarization, Optical lithography, Photoemission spectroscopy

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Proceedings Article | 22 January 2001 Paper

Double-step process for manufacturing reticle to reduce gate CD variation

Makoto Kozuma, Masaya Komatsu, Rieko Arakawa, Seiji Kubo, Tatsuya Takahashi, John Jensen, Hyun-Suk Bang, Il-Ho Lee, Cheol Shin, Hong-Seok Kim, Keun-Won Park

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410759

KEYWORDS: Reticles, Critical dimension metrology, Logic, Image processing, Overlay metrology, Computer aided design, Manufacturing, Dry etching, Transistors, Etching

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Proceedings Article | 19 July 2000 Paper

Effective OPC pattern generation using chemically amplified resist for 0.13-um design rule masks

Il-Ho Lee, Kyung-Han Nam, Hong-Seok Kim

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392083

KEYWORDS: Optical proximity correction, Scattering, Photomasks, Head, Quartz, Dry etching, Backscatter, Lithium, Chemically amplified resists, Scanning electron microscopy

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Proceedings Article | 19 July 2000 Paper

Universal inspection standard for evaluation of inspection system and algorithm sensitivity and runability

Jerry Chen, Charles Howard, Kong Son, Franklin Kalk, Il-Ho Lee

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392032

KEYWORDS: Inspection, Standards development, Manufacturing, Photomasks, Scanning electron microscopy, Environmental sensing, Cadmium sulfide, Chromium, Optical proximity correction, Semiconductors

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Proceedings Article | 25 August 1999 Paper

Implementation of chemically amplified resist on mask technology below 0.6-um feature using high-acceleration voltage e-beam system

Il-Ho Lee, Kyung-Han Nam, Kyeong-Mee Yeon, Keuntaek Park, Sang-Sool Koo, Youngmo Koo, Ki-Ho Baik

Proceedings Volume 3748, (1999) https://doi.org/10.1117/12.360240

KEYWORDS: Photomasks, Scanning electron microscopy, Chemically amplified resists, Dry etching, Optical proximity correction, Photomicroscopy, Photoresist processing, Etching, Coating, Semiconducting wafers

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Proceedings Article | 27 December 1996 Paper

Application of deep-UV attenuated PSM to 0.2-um contact hole patterning technology

Il-Ho Lee, Seo-Min Kim, Chang-Nam Ahn, Ki-Ho Baik

Proceedings Volume 2884, (1996) https://doi.org/10.1117/12.262823

KEYWORDS: Deep ultraviolet, Photomasks, Semiconducting wafers, Transmittance, Printing, Scanning electron microscopy, Optical lithography, Lithography, Reticles, Laser systems engineering

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Proceedings Article | 26 May 1995 Paper

Effect of pattern density for contact windows in an attenuated phase shift mask

Ikboum Hur, Ju-Hwan Kim, Il-Ho Lee, Hung-Eil Kim, Chang-Nam Ahn, Ki-Ho Baik, Soo-Han Choi

Proceedings Volume 2440, (1995) https://doi.org/10.1117/12.209260

KEYWORDS: Transmittance, Lithography, Photomasks, Phase shifts, Semiconducting wafers, Scanning electron microscopy, Photomicroscopy, Phase shifting, Optical lithography, Mask making

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Proceedings Article | 26 May 1995 Paper

Implementation of i-line lithography to 0.30 um design rules

KeunYoung Kim, Hung-Eil Kim, Il-Ho Lee, Jin-Soo Kim, Jun-Sung Chun, Ikboum Hur, Seung-Chan Moon, Ki-Ho Baik, Soo-Han Choi

Proceedings Volume 2440, (1995) https://doi.org/10.1117/12.209286

KEYWORDS: Lithography, Deep ultraviolet, Photomasks, Chromium, Photoresist processing, Phase shifts, Resist chemistry, Optical lithography, Chemically amplified resists, Critical dimension metrology

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The optical lithography is extending its life by combining high numerical aperture (NA) optics and shorter wavelength. The shorter wavelength lithography has required the new developments of related technologies. In particular, DUV resists require an entirely different resist chemistry. Much progress has been demonstrated in the field of transparent chemically amplified resists with high sensitivity. However, this DUV lithography ((lambda) equals 248 nm) has been delayed for mass production due to their limitations, such as (i) delay time effects, (ii) high cost ownership due to expensive resist materials and laser maintenance, and (iii) critical dimension (CD) variation over topography caused by multireflection of topographic features. On the other hand, i- line lithography ((lambda) equals 365 nm) has apparently been applied to 64M DRAM of 0.35 micrometers design rule, and attempted to 0.30 micrometers technology which corresponds to 2nd generation 64M DRAM or 1st generation 256 M DRAM. It might be achieved by combination of off-axis illumination (OAI), phase shift mask (PMS) and advanced resist process technique of i-line lithography. Therefore, i-line lithography can be more practical method rather than DUV lithography for the mass production. In this paper, we have optimized the i-line lithographic techniques for the various pattern shape and density for 0.30 micrometers design rule. Optimum duty ratio was tried to find for line and space, contact hole patterns. The basic rule is to keep the minimum Cr width over 0.30 micrometers mask. OAI have been applied to get higher contrast of line and space, and even contact hole patterns, and achieve good pattern fidelities of island patterns. By the implementation of OAI, process latitudes were greatly improved compared to that of conventional techniques. In order to optimize the process over the actual topography, optimum numerical aperture (NA) and aperture of the OAI were selected. In conclusion, 0.30 micrometers design rule device was successfully fabricated by optimizing the advanced i-line lithographic techniques.

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