Ms. Hui Peng Koh Profile

Hui Peng Koh

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Author

Publications (16)

Proceedings Article | 20 March 2015 Paper

Paper

Process variation challenges and resolution in the negative-tone develop double patterning for 20nm and below technology node

Sohan Mehta, Lakshmi Ganta, Vikrant Chauhan, Yixu Wu, Sunil Singh, Chia Ann, Lokesh Subramany, Craig Higgins, Burcin Erenturk, Ravi Srivastava, Paramjit Singh, Hui Peng Koh, David Cho

Proceedings Volume 9425, 94250B (2015) https://doi.org/10.1117/12.2087546

KEYWORDS: Critical dimension metrology, Binary data, Double patterning technology, Etching, Photomasks, Photoresist processing, Nanoimprint lithography, Image processing, Optical lithography, Neodymium

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Immersion based 20nm technology node and below becoming very challenging to chip designers, process and integration due to multiple patterning to integrate one design layer . Negative tone development (NTD) processes have been well accepted by industry experts for enabling technologies 20 nm and below. 193i double patterning is the technology solution for pitch down to 80 nm. This imposes tight control in critical dimension(CD) variation in double patterning where design patterns are decomposed in two different masks such as in litho-etch-litho etch (LELE). CD bimodality has been widely studied in LELE double patterning. A portion of CD tolerance budget is significantly consumed by variations in CD in double patterning.

The objective of this work is to study the process variation challenges and resolution in the Negative Tone Develop Process for 20 nm and Below Technology Node. This paper describes the effect of dose slope on CD variation in negative tone develop LELE process. This effect becomes even more challenging with standalone NTD developer process due to q-time driven CD variation. We studied impact of different stacks with combination of binary and attenuated phase shift mask and estimated dose slope contribution individually from stack and mask type. Mask 3D simulation was carried out to understand theoretical aspect. In order to meet the minimum insulator requirement for the worst case on wafer the overlay and critical dimension uniformity (CDU) budget margins have slimmed. Besides the litho process and tool control using enhanced metrology feedback, the variation control has other dependencies too. Color balancing between the two masks in LELE is helpful in countering effects such as iso-dense bias, and pattern shifting. Dummy insertion and the improved decomposition techniques [2] using multiple lower priority constraints can help to a great extent. Innovative color aware routing techniques [3] can also help with achieving more uniform density and color balanced layouts.

Proceedings Article | 8 October 2014 Paper

Paper

Best-practice evaluation-methods for wafer-fab photomask-requalification inspection tools

Chan Seob Cho, Ashish Mungmode, Ron Taylor, David Cho, Hui Peng Koh

Proceedings Volume 9235, 92351I (2014) https://doi.org/10.1117/12.2068466

KEYWORDS: Inspection, Defect detection, Photomasks, Reticles, Particles, Air contamination, Optical proximity correction, Contamination, SRAF, Image analysis

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Proceedings Article | 17 April 2014 Paper

Paper

Integration of an EUV metal layer: a 20/14nm demo

Craig Higgins, Erik Verduijn, Xiang Hu, Liang Wang, Mandeep Singh, Jerome Wandell, Sohan Mehta, Jean Raymond Fakhoury, Mark Zaleski, Yi Zou, Hui Peng Koh, Pawitter Mangat

Proceedings Volume 9048, 90481Q (2014) https://doi.org/10.1117/12.2048285

KEYWORDS: Photomasks, Extreme ultraviolet, Semiconducting wafers, Extreme ultraviolet lithography, Metals, Optical lithography, Optical proximity correction, Overlay metrology, Deep ultraviolet, Inspection

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Proceedings Article | 2 April 2014 Paper

Paper

20nm MOL overlay case study

Lokesh Subramany, Michael Hsieh, Chen Li, Hui Peng Koh, David Cho, Anna Golotsvan, Vidya Ramanathan, Ramkumar Karur Shanmugam, Lipkong Yap

Proceedings Volume 9050, 90502Q (2014) https://doi.org/10.1117/12.2046598

KEYWORDS: Overlay metrology, Semiconducting wafers, Chemical mechanical planarization, Optical alignment, Metrology, Image quality, Optical filters, Image processing, Reticles, Scanners

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SPIE Journal Paper | 17 December 2013 Open Access

Open Access

Review of resist-based flare measurement methods for extreme ultraviolet lithography

Lei Sun, Obert Wood, Erik Verduijn, Mandeep Singh, Wenhui Wang, Ryoung-Han Kim, Pawitter Mangat, Hui Peng Koh, Harry Levinson

JM3, Vol. 12, Issue 04, 042001, (December 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.4.042001

KEYWORDS: Point spread functions, Modulation transfer functions, Extreme ultraviolet lithography, Reticles, Extreme ultraviolet, Light scattering, Scattering, Photomasks, Scanning electron microscopy, Semiconducting wafers

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Proceedings Article | 12 April 2013 Paper

Paper

Effects of focus difference of nested and isolated features for scanner proximity matching

GuoXiang Ning, Paul Ackmann, Huifeng Koh, Frank Richter, Matthias Ruhm, Jens Busch, Norman Chen, Karin Kurth , Andre Leschok, Chin Teong Lim

Proceedings Volume 8683, 86831R (2013) https://doi.org/10.1117/12.2011504

KEYWORDS: Scanners, Semiconducting wafers, Optical proximity correction, Critical dimension metrology, Metals, Reticles, Photomasks, Tolerancing, Calibration, Binary data

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Assuming that all exposure tools on which a certain production reticle is being used are from same type and configuration it can be expected that the performance of the reticle should be independent from the exposing machines. When planning or performing arrangements for process transfer between different production sites or capacity expansion within one site performing a proximity matching between different exposure tools is a common activity. One of the objectives of a robust optical proximity correction (OPC) model is to simulate the process variation. Normally, the wafer critical dimension (CD) calibration of an OPC model is applied for one specific scanner first. In order to enhance the tolerance of the OPC model so called fingerprints of different scanners should be matched as closely as possible. Some examples of features for fingerprint test patterns are “critical dimension through pitch” (CDTP), “inverse CDTP”, “tipto-tip” and “linearity patterns”, and CD difference of disposition structures. All of them should also be matched as tightly as possible in order to reduce the process variation and to strengthen the tolerance of an OPC model. However, the focus difference between nested and isolated features which is directly influenced by different exposure tools and reticle layers will have an effect on the proximity matching of some patterns such as inverse CDTP and uniformly distributed disposition structures. In this manuscript the effects of focus differences between nested and isolated features for scanner proximity matching will be demonstrated. Moreover, the results for several scanners and different mask layers using advanced binary mask blank material will also be investigated. Even if some parts of the proximity features are closely enough to each other different parity proximity patterns will be affected by the focus difference between dense and isolated features. Because the focus difference between isolated and dense features is dependent on the illumination conditions, different mask layers applied for a proximity correction will lead to different results. The effects of source variations causing isolated and dense feature focus differences between scanners for 28 nm poly, 1X metal and contact layers will be illustrated.

Proceedings Article | 1 April 2013 Paper

Paper

7nm node EUV predictive study of mask LER transference to wafer

D. Civay, E. Nash, U. Klostermann, T. Wallow, P. Mangat, H. Koh, P. Brooker, J. Siebert, H. Levinson

Proceedings Volume 8679, 86792Q (2013) https://doi.org/10.1117/12.2011197

KEYWORDS: Line edge roughness, Photomasks, Stochastic processes, Semiconducting wafers, Critical dimension metrology, Calibration, Lithography, Extreme ultraviolet, Extreme ultraviolet lithography, Nanoimprint lithography

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Proceedings Article | 29 March 2013 Paper

Paper

Investigation of trench and contact hole shrink mechanism in the negative tone develop process

Sohan Singh Mehta, Craig Higgins, Vikrant Chauhan, Shyam Pal, Hui Peng Koh, Jean Raymond Fakhoury, Shaowen Gao, Lokesh Subramany, Salman Iqbal, Bumhwan Jeon, Pedro Morrison, Chris Karanikas, Yayi Wei, David Cho

Proceedings Volume 8682, 86820O (2013) https://doi.org/10.1117/12.2012331

KEYWORDS: Diffusion, Critical dimension metrology, Polymers, Photoresist processing, Image processing, Manufacturing, Lithography, Optical lithography, Data modeling, Modulation

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Proceedings Article | 23 March 2012 Paper

Paper

EUV OPC for the 20-nm node and beyond

Chris Clifford, Yi Zou, Azat Latypov, Oleg Kritsun, Thomas Wallow, Harry Levinson, Fan Jiang, Deniz Civay, Keith Standiford, Ralph Schlief, Lei Sun, Obert Wood, Sudhar Raghunathan, Pawitter Mangat, Hui Peng Koh, Craig Higgins, Jeffrey Schefske, Mandeep Singh

Proceedings Volume 8322, 83221M (2012) https://doi.org/10.1117/12.916171

KEYWORDS: Optical proximity correction, Extreme ultraviolet, Photomasks, Deep ultraviolet, Semiconducting wafers, Extreme ultraviolet lithography, Lithography, Critical dimension metrology, Printing, Monte Carlo methods

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Proceedings Article | 4 March 2010 Paper

Paper

A novel method to reduce wafer topography effect for implant lithography process

Lei Yuan, Sanggil Bae, Yong Feng Fu, Ao Chen, Hui Peng Koh, Qun Ying Lin

Proceedings Volume 7640, 76403E (2010) https://doi.org/10.1117/12.846002

KEYWORDS: Semiconducting wafers, Lithography, Critical dimension metrology, Reflection, Photomasks, Diffraction, Bottom antireflective coatings, Wafer-level optics, Photoresist processing, Optical lithography

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Proceedings Article | 16 April 2008 Paper

Paper

Advanced lithography parameters extraction by using scatterometry system: part II

Wenzhan Zhou, Michael Hsieh, Huipeng Koh, Meisheng Zhou

Proceedings Volume 6922, 69223Y (2008) https://doi.org/10.1117/12.790826

KEYWORDS: Scatterometry, Critical dimension metrology, Lithography, Photoresist materials, Neural networks, Semiconducting wafers, Metrology, Scatter measurement, Process modeling, Scanners

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Proceedings Article | 5 April 2007 Paper

Paper

Advanced lithography parameters extraction by using scatterometry system

Wenzhan Zhou, Minghao Tang, Huipeng Koh, Meisheng Zhou

Proceedings Volume 6518, 651823 (2007) https://doi.org/10.1117/12.702270

KEYWORDS: Critical dimension metrology, Neural networks, Data modeling, Semiconducting wafers, Scatterometry, Diffractive optical elements, Lithography, Calibration, Monochromatic aberrations, Photomasks

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Proceedings Article | 5 April 2007 Paper

Paper

Say good-bye to DOF: statistical process window analysis with inline lithographic process variations

Wenzhan Zhou, Minghao Tang, Huipeng Koh, Meisheng Zhou

Proceedings Volume 6518, 651832 (2007) https://doi.org/10.1117/12.702276

KEYWORDS: Critical dimension metrology, Data modeling, Statistical analysis, Lithography, Photoresist materials, Statistical modeling, Process modeling, Electroluminescence, Finite element methods, Monte Carlo methods

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Proceedings Article | 4 April 2007 Paper

Paper

Automatic setup of in-line critical dimension (CD) recipes during OPC qualification in a foundry environment

Yasri Yudhistira, Quek Shyue Fong, Chan Sun Sun, Koh Hui Peng, Rachel Ren, Sern Loong Ng, Amit Siany, Shimon Levi

Proceedings Volume 6518, 651809 (2007) https://doi.org/10.1117/12.712534

KEYWORDS: Optical proximity correction, Computer aided design, Semiconducting wafers, Scanning electron microscopy, Pattern recognition, Optical alignment, Wafer-level optics, Data modeling, Etching, Target recognition

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Proceedings Article | 2 June 2003 Paper

Paper

Evaluation of alignment marks using ASML ATHENA alignment system in 90-nm BEOL process

Chin-Boon Tan, Swee-Hock Yeo, Hui Peng Koh, Chee Koo, Yee Foong, Yong Siew

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.487734

KEYWORDS: Semiconducting wafers, Optical alignment, Metals, Scanning probe microscopy, Overlay metrology, Scanners, Back end of line, Chemical mechanical planarization, Signal detection, Sensors

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Proceedings Article | 23 June 2000 Paper

Paper

Effects of process parameters on pattern-edge roughness of chemically amplified resists

Hui Peng Koh, Qunying Lin, Xiao Hu, Lap Chan

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388308

KEYWORDS: Line edge roughness, Edge roughness, Photoresist processing, Image quality, Chemically amplified resists, Critical dimension metrology, Polymer thin films, Polymers, Image processing, Diffusion

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Showing 5 of 16 publications

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