An emission layer with the poly-vinylcarbazole (PVK) and Ir(ppy)3[tris(2-phenylpyridine)iridium(III)] as the host and guest materials, respectively, was prepared on a PEDOT:PSS/ITO substrate. TPBI [2,2,2-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)] was introduced to improve the light efficiency of the devices. Green phosphorescence polymer LEDs with the structure ITO/PEDOT:PSS/PVK:Ir(ppy)3/TPBI/LiF/Al were fabricated and their electrical and optical properties investigated at various doping concentrations (0.5 wt % to 2.5 wt %) of Ir(ppy)3. The maximum luminance and current density were about 8600 cd/m2 and 155 mA/cm2 at 7 V, respectively, when the TPBI layer was introduced between the emission layer and cathode electrode film. The emission spectrum and Commission International d'Eclairage (CIE) color coordinates were about 512 nm and (x,y=0.27 to 0.28, 0.61 to 0.63), respectively, showing a green color.
The phosphorescence polymer LEDs (PhPLEDs) with the structure of ITO/PEDOT:PSS/PVK:Ir(ppy)3:
PFO:Ir(pq)2acac/TPBI/LiF/Al were fabricated to investigate the effect of doping concentrations on the electrical and
optical properties of PhPLEDs. The PVK(poly-vinylcarbazole) and Ir(ppy)3[tris(2-phenylpyridine)iridium(III)] polymers
were used as the host and guest materials. The PFO[poly(9,9-dioctylfluorene)] and Ir(pq)2(acac)
[bis(2-phenyl-1-quinoline)iridiumacety lacetonate] were also introduced as other guest materials for the white emission. The Ir(pq)2acac concentrations was changed ranging from 1.0 to 5.0 volume % (vol %) in the emission layer. The concentration of
PVK:Ir(ppy)3:PFO was fixed with 100:2.0:1.0 in vol %, respectively. The white PhPLEDs were obtained for the samples
with 5.0 vol % of Ir(pq)2acac material and the maximum luminance was found to be 2430 cd/m2. The CIE color
coordinators were ranged with x, y = 0.32~0.33, 0.33~0.34 at 8V, showing good white color.
The phosphorescence polymer LEDs (PhPLEDs) with the structure of ITO/PEDOT:PSS/PVK:Ir(ppy)3/TPBI/LiF/Al
were fabricated and investigated on the electrical and optical properties at variations doping concentrations (0.5wt% to
2.5wt%) of Ir(ppy)3. PVK(poly-vinylcarbazole) and Ir(ppy)3[tris(2-phenylpyridine)iridium(III)] polymers were used as
the host and guest materials for the emission layer. TPBI was introduced to improve the light efficiency of the devices.
The maximum luminance and current density for PhPLED were about 8600 cd/m2 and 155 mA/cm2 at 7 V, when the
TPBI layer was introduced between emission and cathode electrode film. The emission spectrum and the CIE color
coordinator were about 512nm and x, y = 0.28, 0.63, respectively, showing green color.
The flexible organic-inorganic thin film transistors (OITFTs) were fabricated with the structure of Al/ZnO/PVP/Al on PES [polyether sulfone] flexible substrate. PVP [poly-4-vinylphenol] organic gate insulator was coated on Al/PES film by the spin coating method. ZnO active channel layer was deposited on PVP/Si substrate by using atomic layer deposition (ALD) at various temperatures from 80 ~ 140 °C. The structural and electrical properties of ZnO films were analyzed by X-ray diffraction (XRD) and hall-effect measurement system. The carrier concentration and resistivity of ZnO film deposited at 100 °C were found to be about 1017 and 37.7Ω•cm, respectively. The field effect mobility (μ) and threshold voltage (VTH) of the prepared OITFT were about 0.01 cm2/V•s and 12 V, respectively. The I on/off switching ratio was about 104.
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