In the field of science, there is a significant interest in graphene due to its extraordinary properties such as high electrical
conductivity, good electrochemical stability and excellent mechanical behavior. This paper presents the direct graphene
growth on interdigital electrodes by plasma enhanced chemical vapor deposition (PECVD) using Ni catalyst and
methane (CH4) as the carbon source. The 100 nm of Ni was deposited on the top of SiO2 substrate functional as catalyst
and electrode of MEMS supercapacitor. The growth of graphene was investigated at temperature 1000°C at 10 minutes
and at fix power of 40 Watt. The morphology and structure of as- grown graphene were characterized by Raman
spectroscopy, Field Emission Scanning Electron Microscope (FESEM) and Atomic Force Microscopy (AFM). From
Raman spectra, it is observed that the intensity ratio of the 2D band to G band produced a good quality bilayer graphene.
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