Silicon nitride (SiN) have become an essential material for integrated photonics. It is needed whenever very low optical losses, high optical power, low thermal sensitivity or broad wavelength range is required. SiN waveguides therefore present a great interest for applications as diverse as quantum photonics, data-communication, neuromorphic computing, LiDAR, sensing and microwave optic. We present our latest results on two distinct platforms: An 8” LPCVD SiN platform featuring ultra-low loss (5dB/m) and a 12” Physical Vapor Deposition (PVD) SiN platform allowing low loss in the C-band with a low-temperature deposition.
Superconducting nanowire single photon detectors stand today as the best technology, due to their near-unity detection efficiency, low dark count rates, and low timing jitter. In this work, we demonstrate the improvement of the superconducting properties of NbN thin films on 8” silicon-on-insulator wafers by using an ultra-thin (10-15 nm) sputtered AlN buffer layer. The higher crystalline quality of NbN, leads to an increase of the superconducting critical temperature up to 10 K for 9-nm-thick NbN films. The material was validated for single photon detection using a fiber-coupled vertical SNSPD with half-cavity architecture. This results opens the way for the development of CMOS compatible waveguide-integrated detectors. The implementation of such guided devices is a keystone for the development of a fully integrated quantum photonics platform able to generate, manipulate and detect a large number of photonic qubits for secure communications and quantum computing applications.
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